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NUP6012PMUTAG PDF预览

NUP6012PMUTAG

更新时间: 2024-11-05 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
3页 135K
描述
Six-Line Transient Voltage Suppressor Array

NUP6012PMUTAG 技术参数

是否无铅:不含铅生命周期:Obsolete
零件包装代码:DFN包装说明:S-PDSO-N6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:1 week风险等级:5.81
Is Samacsys:N最小击穿电压:5.2 V
外壳连接:ANODE配置:COMMON ANODE, 6 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:S-PDSO-N6JESD-609代码:e3
元件数量:6端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:4 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NUP6012PMUTAG 数据手册

 浏览型号NUP6012PMUTAG的Datasheet PDF文件第2页浏览型号NUP6012PMUTAG的Datasheet PDF文件第3页 
NUP6012PMU  
Six-Line Transient Voltage  
Suppressor Array  
ESD Protection Diodes with UltraLow  
(0.7 pF) Capacitance  
http://onsemi.com  
The sixline voltage transient suppressor array is designed to protect  
voltagesensitive components that require ultralow capacitance from  
ESD and transient voltage events. This device features a common anode  
design which protects six independent high speed data lines in a single  
sixlead UDFN low profile package.  
D
1
D
2
D
3
D
4
D
5
D
6
Excellent clamping capability, low capacitance, low leakage, and fast  
response time make these parts ideal for ESD protection on designs  
where board space is at a premium. Because of its low capacitance, it is  
suited for use in high frequency designs.  
Features  
Low Capacitance Data Lines (0.7 pF Typical)  
Protects up to Six Data Lines  
MARKING  
DIAGRAM  
UDFN Package, 1.6 x 1.6 mm  
1
Low Profile of 0.50 mm for Ultra Slim Design  
ESD Rating: IEC6100042: Level 4  
Contact (14 kV)  
UDFN6 1.6x1.6  
MU SUFFIX  
CASE 517AP  
6
XX MG  
G
1
D , D , D , D ,D and D Pins = 5.2 V Minimum Protection  
XX  
M
G
= Specific Device Code  
= Date Code  
= PbFree Package  
1
2
3
4
5
6
RoHS Compliant  
This is a PbFree Device  
Typical Applications  
(Note: Microdot may be in either location)  
USB 2.0 HighSpeed Interface  
Cell Phones  
PIN CONNECTIONS  
MP3 Players  
6
5
4
D
6
D
1
D
2
D
3
1
2
3
SIM Card Protection  
GND  
D
D
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
5
J
Symbol  
Rating  
Value  
40 to 125  
55 to 150  
260  
Unit  
°C  
4
T
T
T
Operating Junction Temperature Range  
Storage Temperature Range  
J
°C  
STG  
L
Lead Solder Temperature – Maximum  
(10 seconds)  
°C  
ORDERING INFORMATION  
ESD  
IEC 6100042 Contact  
14000  
V
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
Package  
Shipping  
NUP6012PMUTAG  
UDFN6 3000/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
June, 2008Rev. 0  
NUP6012PMU/D  

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