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NUP8020X6T1G

更新时间： 2024-11-04 03:15:07
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
4页 46K
描述
5−Line Transient Voltage Suppressor Array

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中文翻译

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NUP8020X6T1G 技术参数

是否无铅： 不含铅生命周期：Contact Manufacturer
包装说明：R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.8
最大击穿电压：7.2 V最小击穿电压：6.2 V
击穿电压标称值：6.8 V配置：COMMON ANODE, 5 ELEMENTS
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：90 W
元件数量：5端子数量：6
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：5 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NUP8020X6T1G 数据手册

 浏览型号NUP8020X6T1G的Datasheet PDF文件第2页浏览型号NUP8020X6T1G的Datasheet PDF文件第3页浏览型号NUP8020X6T1G的Datasheet PDF文件第4页 
NUP8020X6  
5−Line Transient Voltage  
Suppressor Array  
This 5−line voltage transient suppressor array is designed for  
application requiring transient voltage protection capability. It is  
intended for use in over−transient voltage and ESD sensitive  
equipment such as cell phones, portables, computers, printers and  
other applications. This device features a monolithic common anode  
design which protects five independent lines in a single  
SOT−563 package.  
http://onsemi.com  
SOT−563 5−LINE TRANSIENT  
VOLTAGE SUPPRESSOR  
Features  
PIN ASSIGNMENT  
• Protects up to 5 Lines in a Single SOT−563 Package  
• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model  
and Class C (Exceeding 400 V) per Machine Model.  
• Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)  
• This is a Pb−Free Device  
1
2
3
6
5
4
Applications  
• Hand Held Portable Applications  
• Serial and Parallel Ports  
• Notebooks, Desktops, Servers  
PIN 1. CATHODE  
2. ANODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
J
MARKING  
DIAGRAM  
Symbol  
Rating  
Value  
Unit  
P
1
Peak Power Dissipation  
8x20 msec double exponential waveform,  
(Note 1)  
90  
W
PK  
4
5
SOT−563  
CASE 463A  
STYLE 6  
6
UX M G  
G
3
2
1
T
Operating Junction Temperature Range  
Storage Temperature Range  
−40 to 125  
−55 to 150  
260  
°C  
°C  
°C  
J
UX = Specific Device Code  
T
T
STG  
L
M
G
= Month Code  
Lead Solder Temperature – Maximum  
(10 seconds)  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ESD  
Human Body Model (HBM)  
Machine Model (MM)  
16000  
400  
V
IEC 61000−4−2 Air (ESD)  
IEC 61000−4−2 Contact (ESD)  
15000  
8000  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Non−repetitive current pulse per Figure 1.  
NUP8020X6T1G SOT−563 4000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
February, 2007 − Rev. 0  
NUP8020X6/D  
 
1234

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