Datasheet > NUS2045MN

NUS2045MN

更新时间： 2024-11-25 03:45:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	130K
描述
Overvoltage Protection IC with Integrated MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NUS2045MN 数据手册

NUS2045MN, NUS3045MN

Overvoltage Protection IC

with Integrated MOSFET

These devices represent a new level of safety and integration by

combining the NCP345 overvoltage protection circuit (OVP) with a

20 V P−channel power MOSFET (NUS2045MN) or with a 30 V

P−channel power MOSFET (NUS3045MN). They are specifically

designed to protect sensitive electronic circuitry from overvoltage

transients and power supply faults. During such hazardous events, the

IC quickly disconnects the input supply from the load, thus protecting

the load before any damage can occur.

The OVP ICs are optimized for applications using an external

AC−DC adapter or a car accessory charger to power a portable product

or recharge its internal batteries. They have a nominal overvoltage

threshold of 6.85 V which makes them ideal for single cell Li−Ion as

well as 3/4 cell NiCD/NiMH applications.

http://onsemi.com

MARKING DIAGRAM

x045

AYWWG

DFN8

CASE 506AL

x045

= Device Code

= 2 or 3

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Features

• OvervoltageTurn−Off Time of Less Than 1.0 ms

• Accurate Voltage Threshold of 6.85 V, Nominal

• Undervoltage Lockout Protection; 2.8 V, Nominal

• Control Input Compatible with 1.8 V Logic Levels

• −20 V or −30 V Integrated P−Channel Power MOSFET

(Note: Microdot may be in either location)

PIN ASSIGNMENT

• Low R

= 71 mW @ −4.5 V for NUS2045MN

= 66 mW @ −4.5 V for NUS3045MN

GND

DS(on)

Low R

OUT

GATE

SRC

GND

CNTRL

DRAIN

DS(on)

• Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable

Applications

DRAIN

• Maximum Solder Reflow temperature @ 235°C for MNT1 suffix and

260°C for MNT1G suffix

(Bottom View)

• Pb−Free Packages are Available

Benefits

ORDERING INFORMATION

• Provide Battery Protection

• Integrated Solution Offers Cost and Space Savings

• Integrated Solution Improves System Reliability

†

Device

Package

Shipping

NUS2045MNT1

DFN8

3000 Tape & Reel

NUS2045MNT1G

DFN8

Applications

(Pb−Free)

• Portable Computers and PDAs

• Cell Phones and Handheld Products

• Digital Cameras

NUS3045MNT1

DFN8

3000 Tape & Reel

NUS3045MNT1G

DFN8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

June, 2006 − Rev. 4

NUS2045MN/D

12 3 4 5 6 7...12

中文翻译

下载PDF

与NUS2045MN相关器件

型号	品牌	获取价格	描述	数据表
NUS2045MNT1	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS2045MNT1G	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS2401SNT1	ONSEMI	获取价格	Integrated PNP/NPN Digital Transistors Array
NUS2401SNT1_06	ONSEMI	获取价格	Integrated PNP/NPN Digital Transistors Array
NUS2401SNT1G	ONSEMI	获取价格	Integrated PNP/NPN Digital Transistors Array
NUS2501W6	ONSEMI	获取价格	Integrated NPN Digital Transistor with Switching Transistor with Switching
NUS2501W6T1	ONSEMI	获取价格	Integrated NPN Digital Transistor with Switching Transistor with Switching
NUS3045	ONSEMI	获取价格	Low cap. diode array for 2 Line High Speed USB protection devic
NUS3045MN	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3045MNT1	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET

与NUS2045MN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

NUS2045MN

NUS2045MN 数据手册

与NUS2045MN相关器件

与NUS2045MN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NUS2045MN

NUS2045MN 数据手册

与NUS2045MN相关器件

与NUS2045MN相关文章

您还可以找

您在本页遇到什么问题？