Datasheet > NUS2401SNT1_06

NUS2401SNT1_06

更新时间： 2024-11-21 03:45:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管
页数	文件大小	规格书
5页	134K
描述
Integrated PNP/NPN Digital Transistors Array

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NUS2401SNT1_06 数据手册

NUS2401SNT1

Integrated PNP/NPN Digital

Transistors Array

This new option of integrated digital transistors is designed to

replace a discrete solution array of three transistors and their external

resistor bias network. BRTs (Bias Resistor Transistors) contain a

single transistor with a monolithic bias network consisting of two

resistors; a series base resistor and a base−emitter resistor. The BRT

technology eliminates these individual components by integrating

them into a single device, therefore the integration of three BRTs

results in a significant reduction of both system cost and board space.

This new device is packaged in the SC−74/Case 318F package which

is designed for low power surface mount applications.

http://onsemi.com

(6)

(5)

(4)

Features

• Integrated Design

• Reduces Board Space and Components Count

• Simplifies Circuitry Design

(1)

(2)

(3)

• Offered in Surface Mount Package Technology (SC−74)

• Available in 3000 Unit Tape and Reel

• Pb−Free Package is Available

MARKING

DIAGRAM

Applications

SC−74

CASE 318F

STYLE 4

• Audio Muting Applications

50 M G

• Drive Circuits Applications

• Industrial: Small Appliances, Security Systems, Automated Test

• Consumer: TVs and VCRs, Stereo Receivers, CD Players,

= Specific Device Code

= Date Code

Cassette Recorders

= Pb−Free Package

MAXIMUM RATINGS (Maximum ratings are those values beyond which

device damage can occur. Electrical Characteristics are not guaranteed over

this range.)

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

Rating

Symbol

Value

Unit

Vdc

ORDERING INFORMATION

Collector−Base Voltage

Collector−Emitter Voltage

Emitter−Base Voltage

(BR)CBO

(BR)CEO

(BR)EBO

†

Device

Package

Shipping

Vdc

7.0

Vdc

NUS2401SNT1

SC−74

3000/Tape & Reel

Collector Current − Continuous

200

mAdc

NUS2401SNT1G

SC−74

(Pb−Free)

THERMAL CHARACTERISTICS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Characteristic

Power Dissipation

Symbol

Max

350

Unit

°C

Junction Temperature

Storage Temperature

150

stg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Publication Order Number:

March, 2006 − Rev. 3

NUS2401SNT1/D

12 3 4 5

中文翻译

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与NUS2401SNT1_06相关器件

型号	品牌	获取价格	描述	数据表
NUS2401SNT1G	ONSEMI	获取价格	Integrated PNP/NPN Digital Transistors Array
NUS2501W6	ONSEMI	获取价格	Integrated NPN Digital Transistor with Switching Transistor with Switching
NUS2501W6T1	ONSEMI	获取价格	Integrated NPN Digital Transistor with Switching Transistor with Switching
NUS3045	ONSEMI	获取价格	Low cap. diode array for 2 Line High Speed USB protection devic
NUS3045MN	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3045MNT1	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3045MNT1G	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MN	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MNT1G	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MNT1G	ROCHESTER	获取价格	1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8, 3.30 X 3.30 MM, LEAD FREE, DFN-8

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