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NUS2501W6T1

更新时间： 2024-11-08 21:53:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管光电二极管
页数 文件大小 规格书
6页 63K
描述
Integrated NPN Digital Transistor with Switching Transistor with Switching

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中文翻译

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NUS2501W6T1 技术参数

生命周期：Obsolete零件包装代码：SC-88
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G6
元件数量：1端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NUS2501W6T1 数据手册

 浏览型号NUS2501W6T1的Datasheet PDF文件第2页浏览型号NUS2501W6T1的Datasheet PDF文件第3页浏览型号NUS2501W6T1的Datasheet PDF文件第4页浏览型号NUS2501W6T1的Datasheet PDF文件第5页浏览型号NUS2501W6T1的Datasheet PDF文件第6页 
NUS2501W6  
Integrated NPN Digital  
Transistor with Switching  
Diode Array  
This new option of integrated devices is designed to replace a  
discrete solution of a single transistor with three switching diodes.  
BRT (Bias Resistor Transistor) contains a single transistor with a  
monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. The BRT technology eliminates  
these individual components by integrating them into a single device,  
therefore integration of a single BRT with three switching diodes  
results in a significant reduction of both system cost and board space.  
This new device is offered in the SC−88 surface mount package.  
http://onsemi.com  
1
2
6
5
Features  
• Single SC−88 Surface Mount Package  
• Moisture Sensitivity Level 1  
4
3
Benefits  
• Integration of Six Discrete Components  
• Integrated Solution Offers Cost and Space Savings  
• Integrated Solution Improves System Reliability  
MARKING  
DIAGRAM  
6
Applications  
SC−88  
(SOT−363)  
CASE 419B  
• Wireless Phones  
• Handheld Products  
• Notebook Computers  
• LCD Display Panels  
d
6
LG  
1
1
LG = Specific Device Code  
= Date Code  
d
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
A
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
ORDERING INFORMATION  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current  
V
CBO  
V
CEO  
50  
Vdc  
Device  
Package  
Shipping†  
3000 Tape & Reel  
I
C
100  
80  
mAdc  
Vdc  
NUS2501W6T1  
SC−88  
Diode Reverse Voltage  
Diode Peak Reverse Voltage  
Diode Forward Current  
Diode Peak Forward Current  
V
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
V
RM  
80  
Vdc  
I
F
100  
300  
mAdc  
mAdc  
I
FM  
Semiconductor Components Industries, LLC, 2004  
Publication Order Number:  
January, 2004 − Rev. P1  
NUS2501W6/D  
123456

中文翻译

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