NUS2501W6T1

更新时间： 2024-11-24 21:53:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体开关晶体管光电二极管
页数	文件大小	规格书
6页	63K
描述
Integrated NPN Digital Transistor with Switching Transistor with Switching

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NUS2501W6T1 技术参数

生命周期：	Obsolete	零件包装代码：	SC-88
包装说明：	SMALL OUTLINE, R-PDSO-G6	针数：	6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	Is Samacsys：	N
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：	80	JESD-30 代码：	R-PDSO-G6
元件数量：	1	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

NUS2501W6T1 数据手册

NUS2501W6

Integrated NPN Digital

Transistor with Switching

Diode Array

This new option of integrated devices is designed to replace a

discrete solution of a single transistor with three switching diodes.

BRT (Bias Resistor Transistor) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. The BRT technology eliminates

these individual components by integrating them into a single device,

therefore integration of a single BRT with three switching diodes

results in a significant reduction of both system cost and board space.

This new device is offered in the SC−88 surface mount package.

http://onsemi.com

Features

• Single SC−88 Surface Mount Package

• Moisture Sensitivity Level 1

Benefits

• Integration of Six Discrete Components

• Integrated Solution Offers Cost and Space Savings

• Integrated Solution Improves System Reliability

MARKING

DIAGRAM

Applications

SC−88

(SOT−363)

CASE 419B

• Wireless Phones

• Handheld Products

• Notebook Computers

• LCD Display Panels

LG = Specific Device Code

= Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

Vdc

ORDERING INFORMATION

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current

CBO

CEO

Vdc

Device

Package

Shipping†

3000 Tape & Reel

100

mAdc

Vdc

NUS2501W6T1

SC−88

Diode Reverse Voltage

Diode Peak Reverse Voltage

Diode Forward Current

Diode Peak Forward Current

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Vdc

100

300

mAdc

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

January, 2004 − Rev. P1

NUS2501W6/D

12 3 4 5 6

中文翻译

下载PDF

与NUS2501W6T1相关器件

型号	品牌	获取价格	描述	数据表
NUS3045	ONSEMI	获取价格	Low cap. diode array for 2 Line High Speed USB protection devic
NUS3045MN	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3045MNT1	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3045MNT1G	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MN	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MNT1G	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MNT1G	ROCHESTER	获取价格	1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8, 3.30 X 3.30 MM, LEAD FREE, DFN-8
NUS3055MUTAG	ONSEMI	获取价格	Low Profile Overvoltage Protection IC with Integrated MOSFET
NUS3065MU	ONSEMI	获取价格	Low Profile Overvoltage Protection IC with Integrated MOSFET
NUS3065MUTAG	ONSEMI	获取价格	Low Profile Overvoltage Protection IC with Integrated MOSFET

与NUS2501W6T1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

NUS2501W6T1

NUS2501W6T1 技术参数

NUS2501W6T1 数据手册

与NUS2501W6T1相关器件

与NUS2501W6T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NUS2501W6T1

NUS2501W6T1 技术参数

NUS2501W6T1 数据手册

与NUS2501W6T1相关器件

与NUS2501W6T1相关文章

您还可以找

您在本页遇到什么问题？