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NUS3045MNT1G

更新时间： 2024-11-25 03:45:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 130K
描述
Overvoltage Protection IC with Integrated MOSFET

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中文翻译

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NUS3045MNT1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DFN包装说明：3.30 X 3.30 MM, LEAD FREE, DFN-8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.31可调阈值：NO
模拟集成电路 - 其他类型：POWER SUPPLY SUPPORT CIRCUITJESD-30 代码：S-XDSO-N8
JESD-609代码：e3长度：3.3 mm
信道数量：1功能数量：1
端子数量：8最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：UNSPECIFIED
封装代码：VSON封装等效代码：SOLCC8,.12,32
封装形状：SQUARE封装形式：SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度（摄氏度）：260电源：6 V
认证状态：Not Qualified座面最大高度：1 mm
子类别：Power Management Circuits最大供电电流 (Isup)：1 mA
最大供电电压 (Vsup)：25 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：4.8 V表面贴装：YES
温度等级：INDUSTRIAL端子面层：Tin (Sn)
端子形式：NO LEAD端子节距：0.8 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：3.3 mmBase Number Matches：1

NUS3045MNT1G 数据手册

 浏览型号NUS3045MNT1G的Datasheet PDF文件第2页浏览型号NUS3045MNT1G的Datasheet PDF文件第3页浏览型号NUS3045MNT1G的Datasheet PDF文件第4页浏览型号NUS3045MNT1G的Datasheet PDF文件第5页浏览型号NUS3045MNT1G的Datasheet PDF文件第6页浏览型号NUS3045MNT1G的Datasheet PDF文件第7页 
NUS2045MN, NUS3045MN  
Overvoltage Protection IC  
with Integrated MOSFET  
These devices represent a new level of safety and integration by  
combining the NCP345 overvoltage protection circuit (OVP) with a  
20 V P−channel power MOSFET (NUS2045MN) or with a 30 V  
P−channel power MOSFET (NUS3045MN). They are specifically  
designed to protect sensitive electronic circuitry from overvoltage  
transients and power supply faults. During such hazardous events, the  
IC quickly disconnects the input supply from the load, thus protecting  
the load before any damage can occur.  
The OVP ICs are optimized for applications using an external  
AC−DC adapter or a car accessory charger to power a portable product  
or recharge its internal batteries. They have a nominal overvoltage  
threshold of 6.85 V which makes them ideal for single cell Li−Ion as  
well as 3/4 cell NiCD/NiMH applications.  
http://onsemi.com  
MARKING DIAGRAM  
8
1
x045  
AYWWG  
G
1
DFN8  
CASE 506AL  
x045  
x
A
Y
WW  
G
= Device Code  
= 2 or 3  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Features  
• OvervoltageTurn−Off Time of Less Than 1.0 ms  
• Accurate Voltage Threshold of 6.85 V, Nominal  
• Undervoltage Lockout Protection; 2.8 V, Nominal  
• Control Input Compatible with 1.8 V Logic Levels  
• −20 V or −30 V Integrated P−Channel Power MOSFET  
(Note: Microdot may be in either location)  
PIN ASSIGNMENT  
V
CC  
8
7
6
5
1
2
3
4
IN  
• Low R  
= 71 mW @ −4.5 V for NUS2045MN  
= 66 mW @ −4.5 V for NUS3045MN  
GND  
10  
DS(on)  
Low R  
OUT  
GATE  
SRC  
GND  
CNTRL  
DRAIN  
DS(on)  
• Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable  
Applications  
DRAIN  
9
• Maximum Solder Reflow temperature @ 235°C for MNT1 suffix and  
260°C for MNT1G suffix  
(Bottom View)  
• Pb−Free Packages are Available  
Benefits  
ORDERING INFORMATION  
• Provide Battery Protection  
• Integrated Solution Offers Cost and Space Savings  
• Integrated Solution Improves System Reliability  
†
Device  
Package  
Shipping  
NUS2045MNT1  
DFN8  
3000 Tape & Reel  
3000 Tape & Reel  
NUS2045MNT1G  
DFN8  
Applications  
(Pb−Free)  
• Portable Computers and PDAs  
• Cell Phones and Handheld Products  
• Digital Cameras  
NUS3045MNT1  
DFN8  
3000 Tape & Reel  
3000 Tape & Reel  
NUS3045MNT1G  
DFN8  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2006  
Publication Order Number:  
June, 2006 − Rev. 4  
NUS2045MN/D  
1234567...12

中文翻译

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