Datasheet > NUS2501W6

NUS2501W6

更新时间： 2024-11-24 22:28:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体开关晶体管
页数	文件大小	规格书
6页	63K
描述
Integrated NPN Digital Transistor with Switching Transistor with Switching

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NUS2501W6 数据手册

NUS2501W6

Integrated NPN Digital

Transistor with Switching

Diode Array

This new option of integrated devices is designed to replace a

discrete solution of a single transistor with three switching diodes.

BRT (Bias Resistor Transistor) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. The BRT technology eliminates

these individual components by integrating them into a single device,

therefore integration of a single BRT with three switching diodes

results in a significant reduction of both system cost and board space.

This new device is offered in the SC−88 surface mount package.

http://onsemi.com

Features

• Single SC−88 Surface Mount Package

• Moisture Sensitivity Level 1

Benefits

• Integration of Six Discrete Components

• Integrated Solution Offers Cost and Space Savings

• Integrated Solution Improves System Reliability

MARKING

DIAGRAM

Applications

SC−88

(SOT−363)

CASE 419B

• Wireless Phones

• Handheld Products

• Notebook Computers

• LCD Display Panels

LG = Specific Device Code

= Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

Vdc

ORDERING INFORMATION

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current

CBO

CEO

Vdc

Device

Package

Shipping†

3000 Tape & Reel

100

mAdc

Vdc

NUS2501W6T1

SC−88

Diode Reverse Voltage

Diode Peak Reverse Voltage

Diode Forward Current

Diode Peak Forward Current

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Vdc

100

300

mAdc

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

January, 2004 − Rev. P1

NUS2501W6/D

12 3 4 5 6

中文翻译

下载PDF

与NUS2501W6相关器件

型号	品牌	获取价格	描述	数据表
NUS2501W6T1	ONSEMI	获取价格	Integrated NPN Digital Transistor with Switching Transistor with Switching
NUS3045	ONSEMI	获取价格	Low cap. diode array for 2 Line High Speed USB protection devic
NUS3045MN	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3045MNT1	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3045MNT1G	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MN	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MNT1G	ONSEMI	获取价格	Overvoltage Protection IC with Integrated MOSFET
NUS3046MNT1G	ROCHESTER	获取价格	1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8, 3.30 X 3.30 MM, LEAD FREE, DFN-8
NUS3055MUTAG	ONSEMI	获取价格	Low Profile Overvoltage Protection IC with Integrated MOSFET
NUS3065MU	ONSEMI	获取价格	Low Profile Overvoltage Protection IC with Integrated MOSFET