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NUS2401SNT1 PDF预览

NUS2401SNT1

更新时间: 2024-11-24 21:55:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
6页 56K
描述
Integrated PNP/NPN Digital Transistors Array

NUS2401SNT1 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:SC-74包装说明:CASE 318F-05, SC-74, 6 PIN
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.36
其他特性:BUILT IN BIAS RESISTORS最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:50 V配置:COMPLEX
最小直流电流增益 (hFE):150JESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:3
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn80Pb20)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NUS2401SNT1 数据手册

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NUS2401SNT1  
Integrated PNP/NPN Digital  
Transistors Array  
This new option of integrated digital transistors is designed to  
replace a discrete solution array of three transistors and their external  
resistor bias network. BRTs (Bias Resistor Transistors) contain a  
single transistor with a monolithic bias network consisting of two  
resistors; a series base resistor and a base−emitter resistor. The BRT  
technology eliminates these individual components by integrating  
them into a single device, therefore the integration of three BRTs  
results in a significant reduction of both system cost and board space.  
This new device is packaged in the SC−74/Case 318F package which  
is designed for low power surface mount applications.  
http://onsemi.com  
(6)  
(5)  
(4)  
Q3  
Features  
Integrated Design  
Reduces Board Space and Components Count  
Simplifies Circuitry Design  
Q1  
Q2  
(1)  
(2)  
(3)  
Offered in Surface Mount Package Technology (SC−74)  
Available in 3000 Unit Tape and Reel  
Pb−Free Package is Available  
4
5
6
Typical Applications  
3
2
Audio Muting Applications  
1
Drive Circuits Applications  
Industrial: Small Appliances, Security Systems, Automated Test  
SC−74  
CASE 318F  
STYLE 4  
Consumer: TVs and VCRs, Stereo Receivers, CD Players,  
Cassette Recorders  
MARKING DIAGRAM  
MAXIMUM RATINGS (Maximum Ratings are those values beyond which  
damage to the device may occur. Electrical Characteristics are not  
guaranteed over this range.)  
50 M  
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
50 = Specific Device Code  
= Date Code  
V
V
50  
Vdc  
M
7.0  
Vdc  
Collector Current − Continuous  
I
C
200  
mAdc  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Device  
Package  
Shipping  
Characteristic  
Power Dissipation  
Symbol  
Max  
350  
Unit  
mW  
°C  
P
D
NUS2401SNT1  
SC−74  
3000/Tape & Reel  
3000/Tape & Reel  
Junction Temperature  
Storage Temperature  
T
J
150  
NUS2401SNT1G  
SC−74  
(Pb−Free)  
T
stg  
55 to +150  
°C  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
Publication Order Number:  
April, 2004 − Rev. 2  
NUS2401SNT1/D  

NUS2401SNT1 替代型号

型号 品牌 替代类型 描述 数据表
NUS2401SNT1G ONSEMI

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