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NUR30Q PDF预览

NUR30Q

更新时间: 2024-11-06 03:45:47
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 41K
描述
Quad Schottky Barrier Diodes Array

NUR30Q 数据手册

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NUR30Q  
Quad Schottky Barrier  
Diodes Array  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Features:  
30 VOLT  
QUAD  
SCHOTTKY DIODES ARRAY  
Very Low Forward Voltage  
Guard Ring Protected  
Ultra Small SMD Package  
Typical Applications:  
Ultra High−Speed Switching  
Low Current Rectification  
Low Power Consumption Applications (e.g. Hand−Held Devices)  
1
2
3
5
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
V
R
30  
Volts  
Forward Power Dissipation  
P
F
MARKING  
DIAGRAM  
@ T = 25°C  
385  
3.1  
mW  
mW/°C  
A
Derate above 25°C  
Forward Current (DC)  
Junction Temperature  
I
F
200  
125  
mA  
4
5
SC−88A/SOT−353  
CASE 419A  
STYLE 9  
T
°C  
J
5
R9  
2
1
3
1
R9 = Device Marking  
D
= One Digit Date Code  
ORDERING INFORMATION  
Device  
NUR30QW5T1  
Package  
Shipping†  
SC−88A  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
November, 2003 − Rev. 1  
NUR30Q/D  

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