Datasheet > NUP4304M6_06

NUP4304M6_06

更新时间： 2024-09-15 03:45:47

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	70K
描述
Low Capacitance Diode Array for ESD Protection in Four Data Lines

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NUP4304M6_06 数据手册

NUP4304MR6

Low Capacitance Diode

Array for ESD Protection in

Four Data Lines

NUP4304MR6 is a MicroIntegration™ device designed to provide

protection for sensitive components from possible harmful electrical

transients; for example, ESD (electrostatic discharge).

Features

http://onsemi.com

PIN CONFIGURATION

AND SCHEMATIC

• Low Capacitance (1.5 pF Maximum Between I/O Lines)

• Single Package Integration Design

• Provides ESD Protection for JEDEC Standards JESD22

I/O 1

6 I/O

5 V

Machine Model = Class C

Human Body Model = Class 3B

• Protection for IEC61000−4−2 (Level 4)

8.0 kV (Contact)

4 I/O

1/O 3

15 kV (Air)

• Ensures Data Line Speed and Integrity

• Fewer Components and Less Board Space

MARKING DIAGRAM

• Direct the Transient to Either Positive Side or to the Ground

Applications

• USB 1.1 and 2.0 Data Line Protection

LG MG

• T1/E1 Secondary IC Protection

• T3/E3 Secondary IC Protection

• HDSL, IDSL Secondary IC Protection

• Video Line Protection

TSOP−6

CASE 318F

PLASTIC

= Specific Device Code

= Date Code

= Pb−Free Package

• Microcontroller Input Protection

• Base Stations

(Note: Microdot may be in either location)

• I C Bus Protection

• Pb−Free Package is Available

ORDERING INFORMATION

MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)

Device

Package

Shipping†

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

mAdc

NUP4304MR6T1

TSOP−6 3000/Tape & Reel

Forward Current

200

500

NUP4304MR6T1G TSOP−6 3000/Tape & Reel

(Pb−Free)

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

FM(surge)

RRM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Average Rectified Forward

Current (Note 1)

(averaged over any 20 ms period)

715

F(AV)

Repetitive Peak Forward Current

450

FRM

Non−Repetitive Peak Forward Current

FSM

t = 1.0 ms

t = 1.0 S

2.0

1.0

0.5

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

Publication Order Number:

January, 2006 − Rev. 1

NUP4304MR6/D

12 3 4 5 6

中文翻译

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与NUP4304M6_06相关器件

型号	品牌	获取价格	描述	数据表
NUP4304MR6	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304MR6T1	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304MR6T1G	ONSEMI	获取价格	Integrated Solutions for USB Line Protection and Termination
NUP45V6P5	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP45V6P5_09	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP45V6P5T5G	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP46V8P5	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP46V8P5T5G	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP5120/D	ETC	获取价格	5-Line Transient Voltage Suppressor Array
NUP5120X6	ONSEMI	获取价格	5−Line Transient Voltage Suppressor Array

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