NUP5120X6T2GH

更新时间： 2024-11-05 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		二极管瞬态抑制器
页数	文件大小	规格书
4页	54K
描述
浪涌保护器阵列

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技术参数
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NUP5120X6T2GH 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
针数：	6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.82	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED

NUP5120X6T2GH 数据手册

NUP5120X6

5−Line Transient Voltage

Suppressor Array

This 5−line voltage transient suppressor array is designed for

application requiring transient voltage protection capability. It is

intended for use in over−transient voltage and ESD sensitive

equipment such as cell phones, portables, computers, printers and

other applications. This device features a monolithic common anode

design which protects five independent lines in a single

SOT−563 package.

http://onsemi.com

SOT−563 5−LINE TRANSIENT

VOLTAGE SUPPRESSOR

Features

PIN ASSIGNMENT

• Protects up to 5 Lines in a Single SOT−563 Package

• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model

and Class C (Exceeding 400 V) per Machine Model.

• Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)

• This is a Pb−Free Device

Applications

• Hand Held Portable Applications

• Serial and Parallel Ports

• Notebooks, Desktops, Servers

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. CATHODE

6. CATHODE

MAXIMUM RATINGS (T = 25°C, unless otherwise specified)

MARKING

DIAGRAM

Symbol

Rating

Value

Unit

Peak Power Dissipation

8x20 msec double exponential waveform,

(Note 1)

SOT−563

CASE 463A

STYLE 6

RN MG

Operating Junction Temperature Range

Storage Temperature Range

−40 to 125

−55 to 150

260

°C

= Specific Device Code

= Month Code

= Pb−Free Package

STG

Lead Solder Temperature – Maximum

(10 seconds)

(Note: Microdot may be in either location)

ESD

Human Body Model (HBM)

Machine Model (MM)

16000

400

IEC 61000−4−2 Air (ESD)

IEC 61000−4−2 Contact (ESD)

15000

8000

ORDERING INFORMATION

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Non−repetitive current pulse per Figure 1.

NUP5120X6T1G SOT−563 4000/Tape & Reel

(Pb−Free)

NUP5120X6T2G SOT−563 4000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

December, 2006 − Rev. 4

NUP5120/D

12 3 4

中文翻译

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与NUP5120X6T2GH相关器件

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NUP8011MU	ONSEMI	获取价格	Low Capacitance Transient Voltage Suppressor Array
NUP8011MUTAG	ONSEMI	获取价格	Low Capacitance Transient Voltage Suppressor Array

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