5秒后页面跳转
NUP5120X6 PDF预览

NUP5120X6

更新时间: 2024-11-04 03:23:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 54K
描述
5−Line Transient Voltage Suppressor Array

NUP5120X6 数据手册

 浏览型号NUP5120X6的Datasheet PDF文件第2页浏览型号NUP5120X6的Datasheet PDF文件第3页浏览型号NUP5120X6的Datasheet PDF文件第4页 
NUP5120X6  
5−Line Transient Voltage  
Suppressor Array  
This 5−line voltage transient suppressor array is designed for  
application requiring transient voltage protection capability. It is  
intended for use in over−transient voltage and ESD sensitive  
equipment such as cell phones, portables, computers, printers and  
other applications. This device features a monolithic common anode  
design which protects five independent lines in a single  
SOT−563 package.  
http://onsemi.com  
SOT−563 5−LINE TRANSIENT  
VOLTAGE SUPPRESSOR  
Features  
PIN ASSIGNMENT  
Protects up to 5 Lines in a Single SOT−563 Package  
ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model  
and Class C (Exceeding 400 V) per Machine Model.  
Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)  
This is a Pb−Free Device  
1
2
3
6
5
4
Applications  
Hand Held Portable Applications  
Serial and Parallel Ports  
Notebooks, Desktops, Servers  
PIN 1. CATHODE  
2. ANODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
J
MARKING  
DIAGRAM  
Symbol  
Rating  
Value  
Unit  
P
1
Peak Power Dissipation  
8x20 msec double exponential waveform,  
(Note 1)  
90  
W
PK  
4
5
SOT−563  
CASE 463A  
STYLE 6  
6
RN MG  
G
3
2
1
T
Operating Junction Temperature Range  
Storage Temperature Range  
−40 to 125  
−55 to 150  
260  
°C  
°C  
°C  
J
RN  
M
G
= Specific Device Code  
= Month Code  
= Pb−Free Package  
T
T
STG  
L
Lead Solder Temperature – Maximum  
(10 seconds)  
(Note: Microdot may be in either location)  
ESD  
Human Body Model (HBM)  
Machine Model (MM)  
16000  
400  
V
IEC 61000−4−2 Air (ESD)  
IEC 61000−4−2 Contact (ESD)  
15000  
8000  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Non−repetitive current pulse per Figure 1.  
NUP5120X6T1G SOT−563 4000/Tape & Reel  
(Pb−Free)  
NUP5120X6T2G SOT−563 4000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. 4  
NUP5120/D  
 

与NUP5120X6相关器件

型号 品牌 获取价格 描述 数据表
NUP5120X6T1 ROCHESTER

获取价格

90W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE, CASE 463A-01, 6 PIN
NUP5120X6T1 ONSEMI

获取价格

浪涌保护器阵列
NUP5120X6T1G ONSEMI

获取价格

5−Line Transient Voltage Suppressor Array
NUP5120X6T2 ONSEMI

获取价格

浪涌保护器阵列
NUP5120X6T2G ONSEMI

获取价格

5−Line Transient Voltage Suppressor Array
NUP5120X6T2GH ONSEMI

获取价格

浪涌保护器阵列
NUP5150MU ONSEMI

获取价格

5-Line Transient Voltage Suppressor Array
NUP5150MUTBG ONSEMI

获取价格

5-Line Transient Voltage Suppressor Array
NUP6012PMU ONSEMI

获取价格

Six-Line Transient Voltage Suppressor Array
NUP6012PMUTAG ONSEMI

获取价格

Six-Line Transient Voltage Suppressor Array