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NUP5120X6T2 PDF预览

NUP5120X6T2

更新时间： 2024-11-06 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网光电二极管瞬态抑制器
页数 文件大小 规格书
4页 54K
描述
浪涌保护器阵列

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中文翻译

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NUP5120X6T2 技术参数

是否无铅： 不含铅生命周期：Obsolete
包装说明：CASE 463A-01, 6 PIN针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.55
最大击穿电压：7.2 V最小击穿电压：6.2 V
击穿电压标称值：6.8 V配置：COMMON ANODE, 5 ELEMENTS
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
最大非重复峰值反向功率耗散：90 W元件数量：5
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
认证状态：Not Qualified最大重复峰值反向电压：5 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

NUP5120X6T2 数据手册

 浏览型号NUP5120X6T2的Datasheet PDF文件第2页浏览型号NUP5120X6T2的Datasheet PDF文件第3页浏览型号NUP5120X6T2的Datasheet PDF文件第4页 
NUP5120X6  
5−Line Transient Voltage  
Suppressor Array  
This 5−line voltage transient suppressor array is designed for  
application requiring transient voltage protection capability. It is  
intended for use in over−transient voltage and ESD sensitive  
equipment such as cell phones, portables, computers, printers and  
other applications. This device features a monolithic common anode  
design which protects five independent lines in a single  
SOT−563 package.  
http://onsemi.com  
SOT−563 5−LINE TRANSIENT  
VOLTAGE SUPPRESSOR  
Features  
PIN ASSIGNMENT  
• Protects up to 5 Lines in a Single SOT−563 Package  
• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model  
and Class C (Exceeding 400 V) per Machine Model.  
• Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)  
• This is a Pb−Free Device  
1
2
3
6
5
4
Applications  
• Hand Held Portable Applications  
• Serial and Parallel Ports  
• Notebooks, Desktops, Servers  
PIN 1. CATHODE  
2. ANODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
J
MARKING  
DIAGRAM  
Symbol  
Rating  
Value  
Unit  
P
1
Peak Power Dissipation  
8x20 msec double exponential waveform,  
(Note 1)  
90  
W
PK  
4
5
SOT−563  
CASE 463A  
STYLE 6  
6
RN MG  
G
3
2
1
T
Operating Junction Temperature Range  
Storage Temperature Range  
−40 to 125  
−55 to 150  
260  
°C  
°C  
°C  
J
RN  
M
G
= Specific Device Code  
= Month Code  
= Pb−Free Package  
T
T
STG  
L
Lead Solder Temperature – Maximum  
(10 seconds)  
(Note: Microdot may be in either location)  
ESD  
Human Body Model (HBM)  
Machine Model (MM)  
16000  
400  
V
IEC 61000−4−2 Air (ESD)  
IEC 61000−4−2 Contact (ESD)  
15000  
8000  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Non−repetitive current pulse per Figure 1.  
NUP5120X6T1G SOT−563 4000/Tape & Reel  
(Pb−Free)  
NUP5120X6T2G SOT−563 4000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. 4  
NUP5120/D  
 
1234

中文翻译

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NUP5120X6T2 替代型号

型号 品牌 替代类型 描述 数据表
NUP5120X6T1 ONSEMI

完全替代

 浪涌保护器阵列
NUP5120X6T2G ONSEMI

完全替代

 5−Line Transient Voltage Suppressor Array
NUP5120X6T1G ONSEMI

完全替代

 5−Line Transient Voltage Suppressor Array

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