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NUP4304MR6T1 PDF预览

NUP4304MR6T1

更新时间： 2024-11-05 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
6页 70K
描述
Low Capacitance Diode Array for ESD Protection in Four Data Lines

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中文翻译

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NUP4304MR6T1 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：TSOP包装说明：PLASTIC, CASE 318F-05, TSOP-6
针数：6Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.75Is Samacsys：N
其他特性：LOW CAPACITANCE最小击穿电压：70 V
击穿电压标称值：70 V配置：COMPLEX
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PDSO-G6JESD-609代码：e0
元件数量：8端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：70 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Tin/Lead (Sn80Pb20)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

NUP4304MR6T1 数据手册

 浏览型号NUP4304MR6T1的Datasheet PDF文件第2页浏览型号NUP4304MR6T1的Datasheet PDF文件第3页浏览型号NUP4304MR6T1的Datasheet PDF文件第4页浏览型号NUP4304MR6T1的Datasheet PDF文件第5页浏览型号NUP4304MR6T1的Datasheet PDF文件第6页 
NUP4304MR6  
Low Capacitance Diode  
Array for ESD Protection in  
Four Data Lines  
NUP4304MR6 is a MicroIntegration™ device designed to provide  
protection for sensitive components from possible harmful electrical  
transients; for example, ESD (electrostatic discharge).  
Features  
http://onsemi.com  
PIN CONFIGURATION  
AND SCHEMATIC  
• Low Capacitance (1.5 pF Maximum Between I/O Lines)  
• Single Package Integration Design  
• Provides ESD Protection for JEDEC Standards JESD22  
I/O 1  
6 I/O  
5 V  
Machine Model = Class C  
Human Body Model = Class 3B  
• Protection for IEC61000−4−2 (Level 4)  
8.0 kV (Contact)  
V
P
2
N
4 I/O  
1/O 3  
15 kV (Air)  
• Ensures Data Line Speed and Integrity  
• Fewer Components and Less Board Space  
MARKING DIAGRAM  
• Direct the Transient to Either Positive Side or to the Ground  
4
5
Applications  
6
• USB 1.1 and 2.0 Data Line Protection  
3
LG MG  
2
1
• T1/E1 Secondary IC Protection  
• T3/E3 Secondary IC Protection  
• HDSL, IDSL Secondary IC Protection  
• Video Line Protection  
G
TSOP−6  
CASE 318F  
PLASTIC  
LG  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
• Microcontroller Input Protection  
• Base Stations  
(Note: Microdot may be in either location)  
2
• I C Bus Protection  
• Pb−Free Package is Available  
ORDERING INFORMATION  
MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)  
J
Device  
Package  
Shipping†  
Rating  
Reverse Voltage  
Symbol  
Value  
70  
Unit  
Vdc  
mAdc  
mAdc  
V
V
R
NUP4304MR6T1  
TSOP−6 3000/Tape & Reel  
Forward Current  
I
F
200  
500  
70  
NUP4304MR6T1G TSOP−6 3000/Tape & Reel  
(Pb−Free)  
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I
FM(surge)  
V
RRM  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Average Rectified Forward  
Current (Note 1)  
(averaged over any 20 ms period)  
I
715  
mA  
F(AV)  
Repetitive Peak Forward Current  
I
450  
mA  
A
FRM  
Non−Repetitive Peak Forward Current  
I
FSM  
t = 1.0 ms  
t = 1.0 ms  
t = 1.0 S  
2.0  
1.0  
0.5  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 1  
NUP4304MR6/D  
 
123456

中文翻译

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NUP4304MR6T1 替代型号

型号 品牌 替代类型 描述 数据表
NUP4301MR6T1G ONSEMI

完全替代

 Integrated Solutions for USB Line Protection and Termination
NUP4304MR6T1G ONSEMI

完全替代

 Integrated Solutions for USB Line Protection and Termination
NUP4301MR6T1 ONSEMI

类似代替

 Low Capacitance Diode Array for ESD Protection in Four Data Lines

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