5秒后页面跳转
NUP4301MR6T1 PDF预览

NUP4301MR6T1

更新时间: 2024-11-22 22:10:07
品牌 Logo 应用领域
安森美 - ONSEMI 二极管光电二极管局域网
页数 文件大小 规格书
4页 48K
描述
Low Capacitance Diode Array for ESD Protection in Four Data Lines

NUP4301MR6T1 技术参数

是否无铅: 含铅生命周期:Obsolete
包装说明:CASE 318F-04, TSOP-6针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:1 week
风险等级:5.59Is Samacsys:N
最小击穿电压:70 V击穿电压标称值:70 V
配置:COMPLEX二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:8
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:70 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin/Lead (Sn80Pb20)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

NUP4301MR6T1 数据手册

 浏览型号NUP4301MR6T1的Datasheet PDF文件第2页浏览型号NUP4301MR6T1的Datasheet PDF文件第3页浏览型号NUP4301MR6T1的Datasheet PDF文件第4页 
NUP4301MR6T1  
Low Capacitance Diode  
Array for ESD Protection in  
Four Data Lines  
NUP4301MR6T1 is a MicroIntegration device designed to  
provide protection for sensitive components from possible harmful  
electrical transients; for example, ESD (electrostatic discharge).  
http://onsemi.com  
PIN CONFIGURATION  
AND SCHEMATIC  
Features  
Low Capacitance (1.5 pf Maximum Between I/O Lines)  
Single Package Integration Design  
Provides ESD Protection for JEDEC Standards JESD22  
Machine Model = Class C  
I/O 1  
6 I/O  
5 V  
V
N
2
P
Human Body Model = Class 3B  
Protection for IEC61000-4-2 (Level 4)  
8.0 kV (Contact)  
4 I/O  
1/O 3  
15 kV (Air)  
Ensures Data Line Speed and Integrity  
Fewer Components and Less Board Space  
Direct the Transient to Either Positive Side or to the Ground  
MARKING DIAGRAM  
4
5
6
3
Applications  
d
2
1
64  
USB 1.1 and 2.0 Data Line Protection  
T1/E1 Secondary IC Protection  
T3/E3 Secondary IC Protection  
HDSL, IDSL Secondary IC Protection  
Video Line Protection  
TSOP-6  
CASE 318F  
PLASTIC  
64 = Specific Device Code  
d
= Date Code  
Microcontroller Input Protection  
Base Stations  
I C Bus Protection  
ORDERING INFORMATION  
2
Device  
Package  
Shipping  
NUP4301MR6T1 TSOP-6  
3000/Tape & Reel  
MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Symbol  
Value  
70  
Unit  
Vdc  
mAdc  
mAdc  
V
V
R
Forward Current  
I
F
200  
500  
70  
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I
FM(surge)  
V
RRM  
Average Rectified Forward  
Current (Note 1)  
I
715  
mA  
F(AV)  
(averaged over any 20 ms period)  
Repetitive Peak Forward Current  
I
450  
mA  
A
FRM  
Non-Repetitive Peak Forward Current  
I
FSM  
t = 1.0 ms  
t = 1.0 ms  
t = 1.0 S  
2.0  
1.0  
0.5  
1. FR-5 = 1.0 0.75 0.062 in.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
February, 2003 - Rev. 2  
NUP4301MR6T1/D  

NUP4301MR6T1 替代型号

型号 品牌 替代类型 描述 数据表
NUP4301MR6T1G ONSEMI

完全替代

Integrated Solutions for USB Line Protection and Termination
NUP4304MR6T1 ONSEMI

类似代替

Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304MR6T1G ONSEMI

类似代替

Integrated Solutions for USB Line Protection and Termination

与NUP4301MR6T1相关器件

型号 品牌 获取价格 描述 数据表
NUP4301MR6T1/D ONSEMI

获取价格

Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4301MR6T1_05 ONSEMI

获取价格

Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4301MR6T1G ONSEMI

获取价格

Integrated Solutions for USB Line Protection and Termination
NUP4302MR6 ONSEMI

获取价格

Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6_06 ONSEMI

获取价格

Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6T1 ONSEMI

获取价格

Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6T1G ONSEMI

获取价格

Schottky Diode Array for Four Data Line ESD Protection
NUP4304 ONSEMI

获取价格

Low cap. diode array for 2 Line High Speed USB protection devic
NUP4304M6/D ETC

获取价格

Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304M6_06 ONSEMI

获取价格

Low Capacitance Diode Array for ESD Protection in Four Data Lines