Datasheet > NUP4304M6/D

NUP4304M6/D

更新时间： 2024-11-03 23:55:07

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
4页	50K
描述
Low Capacitance Diode Array for ESD Protection in Four Data Lines

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NUP4304M6/D 数据手册

NUP4304MR6

Advance Information

Low Capacitance Diode

Array for ESD Protection in

Four Data Lines

http://onsemi.com

NUP4304MR6 is a MicroIntegration device designed to provide

protection for sensitive components from possible harmful electrical

transients; for example, ESD (electrostatic discharge).

PIN CONFIGURATION

AND SCHEMATIC

Features

• Low Capacitance (1.5 pF Maximum Between I/O Lines)

• Single Package Integration Design

• Provides ESD Protection for JEDEC Standards JESD22

Machine Model = Class C

I/O 1

6 I/O

5 V

4 I/O

1/O 3

Human Body Model = Class 3B

• Protection for IEC61000−4−2 (Level 4)

8.0 kV (Contact)

15 kV (Air)

MARKING DIAGRAM

• Ensures Data Line Speed and Integrity

• Fewer Components and Less Board Space

• Direct the Transient to Either Positive Side or to the Ground

Applications

TSOP−6

• USB 1.1 and 2.0 Data Line Protection

• T1/E1 Secondary IC Protection

• T3/E3 Secondary IC Protection

• HDSL, IDSL Secondary IC Protection

• Video Line Protection

CASE 318F

PLASTIC

LG= Specific Device Code

= Date Code

ORDERING INFORMATION

• Microcontroller Input Protection

• Base Stations

Device

NUP4304MR6

Package

Shipping†

3000/Tape & Reel

• I C Bus Protection

TSOP−6

MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

mAdc

Forward Current

200

500

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

FM(surge)

RRM

Average Rectified Forward

Current (Note 1)

715

F(AV)

(averaged over any 20 ms period)

Repetitive Peak Forward Current

450

FRM

Non−Repetitive Peak Forward Current

FSM

t = 1.0 ms

t = 1.0 S

2.0

1.0

0.5

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

January, 2004 − Rev. P0

NUP4304MR6/D

12 3 4

中文翻译

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与NUP4304M6/D相关器件

型号	品牌	获取价格	描述	数据表
NUP4304M6_06	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304MR6	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304MR6T1	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304MR6T1G	ONSEMI	获取价格	Integrated Solutions for USB Line Protection and Termination
NUP45V6P5	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP45V6P5_09	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP45V6P5T5G	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP46V8P5	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP46V8P5T5G	ONSEMI	获取价格	Low Capacitance Quad Array for ESD Protection
NUP5120/D	ETC	获取价格	5-Line Transient Voltage Suppressor Array

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