Datasheet > NUP4301MR6T1_05

NUP4301MR6T1_05

更新时间： 2024-09-14 10:30:11

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	53K
描述
Low Capacitance Diode Array for ESD Protection in Four Data Lines

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NUP4301MR6T1_05 数据手册

NUP4301MR6T1

Low Capacitance Diode

Array for ESD Protection in

Four Data Lines

NUP4301MR6T1 is a MicroIntegrationt device designed to

provide protection for sensitive components from possible harmful

electrical transients; for example, ESD (electrostatic discharge).

http://onsemi.com

Features

• Low Capacitance (1.5 pf Maximum Between I/O Lines)

• Single Package Integration Design

• Provides ESD Protection for JEDEC Standards JESD22

Machine Model = Class C

TSOP−6

CASE 318F

PLASTIC

Human Body Model = Class 3B

• Protection for IEC61000−4−2 (Level 4)

8.0 kV (Contact)

15 kV (Air)

• Ensures Data Line Speed and Integrity

MARKING DIAGRAM

• Fewer Components and Less Board Space

• Direct the Transient to Either Positive Side or to the Ground

• Pb−Free Package is Available

64M G

Applications

• USB 1.1 and 2.0 Data Line Protection

• T1/E1 Secondary IC Protection

• T3/E3 Secondary IC Protection

• HDSL, IDSL Secondary IC Protection

• Video Line Protection

= Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location.

• Microcontroller Input Protection

• Base Stations

*Date Code orientation may vary depending

upon manufacturing location.

• I C Bus Protection

PIN CONFIGURATION

AND SCHEMATIC

MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

mAdc

Reverse Voltage

Forward Current

I/O 1

6 I/O

5 V

200

500

Peak Forward Surge Current

FM(surge)

Repetitive Peak Reverse Voltage

RRM

4 I/O

1/O 3

Average Rectified Forward

Current (Note 1)

715

F(AV)

(averaged over any 20 ms period)

ORDERING INFORMATION

Repetitive Peak Forward Current

450

FRM

†

Non−Repetitive Peak Forward Current

FSM

Device

NUP4301MR6T1

Package

Shipping

t = 1.0 ms

t = 1.0 S

2.0

1.0

0.5

TSOP−6 3000/Tape & Reel

NUP4301MR6T1G TSOP−6 3000/Tape & Reel

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

September, 2005 − Rev. 3

NUP4301MR6T1/D

12 3 4

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与NUP4301MR6T1_05相关器件

型号	品牌	获取价格	描述	数据表
NUP4301MR6T1G	ONSEMI	获取价格	Integrated Solutions for USB Line Protection and Termination
NUP4302MR6	ONSEMI	获取价格	Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6_06	ONSEMI	获取价格	Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6T1	ONSEMI	获取价格	Schottky Diode Array for Four Data Line ESD Protection
NUP4302MR6T1G	ONSEMI	获取价格	Schottky Diode Array for Four Data Line ESD Protection
NUP4304	ONSEMI	获取价格	Low cap. diode array for 2 Line High Speed USB protection devic
NUP4304M6/D	ETC	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304M6_06	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304MR6	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines
NUP4304MR6T1	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Four Data Lines

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