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NTD60N02R-1G PDF预览

NTD60N02R-1G

更新时间： 2024-11-20 22:06:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 85K
描述
Power MOSFET 62 A, 24 V, N−Channel, DPAK

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中文翻译

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NTD60N02R-1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：IN-LINE, R-PSIP-T3针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.16Base Number Matches：1

NTD60N02R-1G 数据手册

 浏览型号NTD60N02R-1G的Datasheet PDF文件第2页浏览型号NTD60N02R-1G的Datasheet PDF文件第3页浏览型号NTD60N02R-1G的Datasheet PDF文件第4页浏览型号NTD60N02R-1G的Datasheet PDF文件第5页浏览型号NTD60N02R-1G的Datasheet PDF文件第6页浏览型号NTD60N02R-1G的Datasheet PDF文件第7页 
NTD60N02R  
Power MOSFET  
62 A, 24 V, N−Channel, DPAK  
Features  
• Planar HD3e Process for Fast Switching Performance  
• Low R  
to Minimize Conduction Loss  
DS(on)  
http://onsemi.com  
• Low C to Minimize Driver Loss  
iss  
• Low Gate Charge  
• Optimized for High Side Switching Requirements in  
High−Efficiency DC−DC Converters  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
24 V  
8.4 mW @ 10 V  
62 A  
• Pb−Free Packages are Available  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
N−Channel  
J
D
Rating  
Drain−to−Source Voltage  
Symbol Value Unit  
V
DSS  
24  
Vdc  
Vdc  
Gate−to−Source Voltage − Continuous  
V
GS  
±20  
G
Thermal Resistance  
Junction−to−Case  
Total Power Dissipation @ T = 25°C  
R
P
2.6  
58  
°C/W  
W
q
JC  
C
D
S
Drain Current  
Continuous @ T = 25°C, Chip  
I
I
I
62  
50  
32  
A
A
A
C
D
D
D
Continuous @ T = 25°C, Limited by Package  
C
4
Continuous @ T = 25°C, Limited by Wires  
A
4
4
Thermal Resistance  
Junction−to−Ambient (Note 1)  
R
P
I
80  
1.87  
10.5  
C/W  
W
A
q
JA  
Total Power Dissipation @ T = 25°C  
2
3
A
D
2
1
1
Drain Current − Continuous @ T = 25°C  
1
A
D
3
2
3
Thermal Resistance  
Junction−to−Ambient (Note 2)  
Total Power Dissipation @ T = 25°C  
R
P
I
120  
1.25  
8.5  
°C/W  
W
A
q
JA  
CASE 369AA  
DPAK  
CASE 369C  
DPAK  
CASE 369D  
DPAK  
A
D
Drain Current − Continuous @ T = 25°C  
A
D
(Surface Mount) (Surface Mount) (Straight Lead)  
STYLE 2  
STYLE 2  
STYLE 2  
Operating and Storage Temperature  
T , and −55 to  
J
°C  
T
stg  
175  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
60  
mJ  
MARKING DIAGRAM  
& PIN ASSIGNMENTS  
− Starting T = 25°C  
J
(V = 50 Vdc, V = 10.0 Vdc,  
DD  
GS  
I = 11 Apk, L = 1.0 mH, R = 25 W)  
4
L
G
Drain  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
4
Drain  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.  
2. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
2
1
Gate  
3
1
2
3
Drain  
Source  
Gate Drain Source  
Y
WW  
= Year  
= Work Week  
60N02R = Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
December, 2004 − Rev. 10  
NTD60N02R/D  
 
12345678

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NTD60N02R-1G 替代型号

型号 品牌 替代类型 描述 数据表
NTD50N03RT4G ONSEMI

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NTD60N02RT4 ONSEMI

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