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NTD60N02R-35 PDF预览

NTD60N02R-35

更新时间： 2024-11-21 15:46:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
8页 80K
描述
32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3

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NTD60N02R-35 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：CASE 369D-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.27雪崩能效等级（Eas）：60 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (ID)：32 A
最大漏源导通电阻：0.0105 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSIP-T3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTD60N02R-35 数据手册

 浏览型号NTD60N02R-35的Datasheet PDF文件第2页浏览型号NTD60N02R-35的Datasheet PDF文件第3页浏览型号NTD60N02R-35的Datasheet PDF文件第4页浏览型号NTD60N02R-35的Datasheet PDF文件第5页浏览型号NTD60N02R-35的Datasheet PDF文件第6页浏览型号NTD60N02R-35的Datasheet PDF文件第7页 
NTD60N02R  
Power MOSFET  
62 A, 25 V, N−Channel, DPAK  
Features  
• Planar HD3e Process for Fast Switching Performance  
http://onsemi.com  
• Low R  
to Minimize Conduction Loss  
DS(on)  
• Low C to Minimize Driver Loss  
iss  
V
R
DS(on)  
TYP  
I MAX  
D
(BR)DSS  
• Low Gate Charge  
25 V  
8.4 mW @ 10 V  
62 A  
• Optimized for High Side Switching Requirements in  
High−Efficiency DC−DC Converters  
• Pb−Free Packages are Available  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Symbol Value Unit  
G
V
25  
20  
Vdc  
Vdc  
DSS  
Gate−to−Source Voltage − Continuous  
V
GS  
S
4
Thermal Resistance  
Junction−to−Case  
Total Power Dissipation @ T = 25°C  
Drain Current  
R
P
2.6  
58  
°C/W  
q
JC  
4
W
C
D
4
Continuous @ T = 25°C, Chip  
I
I
I
62  
50  
32  
A
A
A
C
D
D
D
Continuous @ T = 25°C, Limited by Package  
C
Continuous @ T = 25°C, Limited by Wires  
A
2
3
1
1
1
2
3
Thermal Resistance  
2
3
Junction−to−Ambient (Note 1)  
Total Power Dissipation @ T = 25°C  
Drain Current − Continuous @ T = 25°C  
R
P
I
80  
1.87  
10.5  
C/W  
W
A
q
JA  
A
D
D
CASE 369AA  
DPAK  
CASE 369AC  
3 IPAK  
CASE 369D  
DPAK  
A
(Surface Mount) (Straight Lead) (Straight Lead)  
Thermal Resistance  
Junction−to−Ambient (Note 2)  
R
P
I
120  
1.25  
8.5  
°C/W  
W
A
STYLE 2  
STYLE 2  
q
JA  
Total Power Dissipation @ T = 25°C  
A
D
D
Drain Current − Continuous @ T = 25°C  
A
MARKING DIAGRAM  
& PIN ASSIGNMENTS  
Operating and Storage Temperature  
T , and −55 to  
°C  
J
T
175  
stg  
4
Single Pulse Drain−to−Source Avalanche Energy  
E
60  
mJ  
AS  
Drain  
− Starting T = 25°C  
J
4
(V = 50 Vdc, V = 10.0 Vdc,  
DD  
GS  
Drain  
I = 11 Apk, L = 1.0 mH, R = 25 W)  
L
G
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.  
2. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
2
1
Gate  
3
1
2
3
Drain  
Source  
Gate Drain Source  
Y
WW  
= Year  
= Work Week  
T60N02R = Device Code  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. 12  
NTD60N02R/D  
 
12345678

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与NTD60N02R-35相关器件

型号 品牌 获取价格 描述 数据表
NTD60N02R-35G ONSEMI

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 		Power MOSFET 62 A, 25 V, N−Channel, DPAK
NTD60N02R-35G ROCHESTER

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 		32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3
NTD60N02RG ONSEMI

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 		Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02RG ROCHESTER

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 		32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3
NTD60N02RT4 ONSEMI

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 		Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02RT4 ROCHESTER

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 		32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369AA-01, DPAK-3
NTD60N02RT4G ONSEMI

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 		Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02RT4G ROCHESTER

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 		32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3
NTD60N03 ONSEMI

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 		Power MOSFET 60 Amps, 28 Volts
NTD60N03-1 ONSEMI

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 		Power MOSFET 60 Amps, 28 Volts

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