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NTD4979N-1G

更新时间： 2024-11-06 21:08:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 107K
描述
POWER, FET

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NTD4979N-1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：not_compliant风险等级：5.81
Base Number Matches：1

NTD4979N-1G 数据手册

 浏览型号NTD4979N-1G的Datasheet PDF文件第2页浏览型号NTD4979N-1G的Datasheet PDF文件第3页浏览型号NTD4979N-1G的Datasheet PDF文件第4页浏览型号NTD4979N-1G的Datasheet PDF文件第5页浏览型号NTD4979N-1G的Datasheet PDF文件第6页浏览型号NTD4979N-1G的Datasheet PDF文件第7页 
NTD4979N  
Power MOSFET  
30 V, 41 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• Three Package Variations for Design Flexibility  
http://onsemi.com  
V
R
MAX  
I
D
MAX  
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
9.0 mW @ 10 V  
19 mW @ 4.5 V  
Compliant  
30 V  
41 A  
Applications  
• CPU Power Delivery  
• DC−DC Converters  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
G
V
DSS  
V
V
A
V
GS  
20  
S
Continuous Drain  
Current R  
I
D
T = 25°C  
12.7  
A
N−CHANNEL MOSFET  
q
JA  
T = 100°C  
A
9.0  
(Note 1)  
Power Dissipation  
(Note 1)  
4
T = 25°C  
A
P
2.56  
W
A
4
D
D
D
R
q
JA  
4
Continuous Drain  
Current R  
I
D
T = 25°C  
A
9.4  
6.6  
q
JA  
T = 100°C  
A
Steady  
State  
2
(Note 2)  
Power Dissipation  
(Note 2)  
1
1
1
2
3
3
T = 25°C  
A
P
I
1.38  
W
A
2
3
R
q
JA  
CASE 369AC  
3 IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
CASE 369D  
IPAK  
(Straight Lead  
DPAK)  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
41  
29  
D
C
q
JC  
T
C
(Note 1)  
Power Dissipation  
(Note 1)  
T
C
P
26.3  
W
A
R
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
150  
40  
4
Current Limited by Package  
T = 25°C  
A
I
A
DmaxPkg  
Drain  
4
4
Operating Junction and Storage  
Temperature  
T ,  
−55 to  
+175  
°C  
J
Drain  
Drain  
T
STG  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
24  
6.0  
18  
A
S
dV/dt  
EAS  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche  
Energy (T = 25°C, V = 24 V, V = 10 V,  
J
DD  
GS  
2
I = 19 A , L = 0.1 mH, R = 25 W)  
L
pk  
G
1
2
3
Drain  
1
3
Gate Drain Source  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
260  
°C  
Gate Source  
1
2
3
Gate Drain Source  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
Y
= Assembly Location  
= Year  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
WW  
= Work Week  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
4979N = Device Code  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
May, 2014 − Rev. 1  
NTD4979N/D  
 
1234567

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