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NTD50N03RG

更新时间： 2024-09-14 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 79K
描述
Power MOSFET

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中文翻译

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NTD50N03RG 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PSSO-G2针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.27
Is Samacsys：NBase Number Matches：1

NTD50N03RG 数据手册

 浏览型号NTD50N03RG的Datasheet PDF文件第2页浏览型号NTD50N03RG的Datasheet PDF文件第3页浏览型号NTD50N03RG的Datasheet PDF文件第4页浏览型号NTD50N03RG的Datasheet PDF文件第5页浏览型号NTD50N03RG的Datasheet PDF文件第6页浏览型号NTD50N03RG的Datasheet PDF文件第7页 
NTD50N03R  
Power MOSFET  
25 V, 45 A, Single N−Channel, DPAK  
Features  
• Planar Technology  
• Low R  
to Minimize Conduction Losses  
DS(on)  
http://onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• Pb−Free Packages are Available  
V
R
DS(on)  
TYP  
I MAX  
D
(BR)DSS  
12.5 mW @ 10 V  
19 mW @ 4.5 V  
Applications  
25 V  
45 A  
• VCORE DC−DC Buck Converter Applications  
• Optimized for High Side Switching  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Continuous Drain  
V
25  
"20  
9.2  
V
V
A
DSS  
G
V
GS  
T = 25°C  
I
D
A
Current (R  
(Note 1)  
)
q
JA  
S
4
T = 85°C  
A
7.2  
2.1  
Power Dissipation  
(R ) (Note 1)  
T = 25°C  
A
P
W
A
D
D
D
4
q
JA  
4
Continuous Drain  
T = 25°C  
A
I
7.8  
6.0  
1.5  
D
Current (R  
(Note 2)  
)
q
JA  
T = 85°C  
A
2
3
Steady  
State  
1
1
1
2
3
2
Power Dissipation  
(R ) (Note 2)  
T = 25°C  
A
P
I
W
A
3
q
JA  
CASE 369AA  
DPAK  
(Surface Mount) (Straight Lead) (Straight Lead)  
STYLE 2 STYLE 2  
CASE 369D  
DPAK  
CASE 369AC  
3 IPAK  
Continuous Drain  
T
T
T
= 25°C  
= 85°C  
= 25°C  
45  
35  
50  
C
C
C
D
Current (R  
(Note 1)  
)
q
JC  
Power Dissipation  
(R ) (Note 1)  
P
W
A
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain Current  
T = 25°C,  
t = 10 ms  
I
180  
45  
A
DM  
p
4
Current Limited by  
Package  
T = 25°C  
I
A
A
DmaxPkg  
Drain  
4
Operating Junction and Storage  
Temperature  
T , T  
J
−55 to  
175  
°C  
stg  
Drain  
Source Current (Body Diode)  
Drain−to−Source (dv/dt)  
I
45  
8.0  
20  
A
S
dv/dt  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche  
E
AS  
1
Gate  
3
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
2
Source  
I = 6.32 A , L = 1.0 mH, R = 25 W)  
3
1
Gate  
2
L
pk  
G
Drain  
Source  
Drain  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Y
WW  
= Year  
= Work Week  
T50N03R = Device Code  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
G
1. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 4  
NTD50N03R/D  
 
12345678

中文翻译

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NTD50N03RG 替代型号

型号 品牌 替代类型 描述 数据表
NTD50N03RT4G ONSEMI

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