Datasheet > NLV14106BDG

NLV14106BDG

更新时间： 2024-11-27 01:10:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	126K
描述
Hex Schmitt Trigger

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NLV14106BDG 数据手册

MC14106B

Hex Schmitt Trigger

The MC14106B hex Schmitt Trigger is constructed with MOS

P−channel and N−channel enhancement mode devices in a single

monolithic structure. These devices find primary use where low power

dissipation and/or high noise immunity is desired. The MC14106B

may be used in place of the MC14069UB hex inverter for enhanced

noise immunity or to “square up” slowly changing waveforms.

This device contains protection circuitry to guard against damage

due to high static voltages or electric fields. However, precautions

must be taken to avoid applications of any voltage higher than

maximum rated voltages to this high−impedance circuit. For proper

operation, V and V should be constrained to the range V ≤ (V

http://onsemi.com

out

SOIC−14 NB

D SUFFIX

CASE 751A

TSSOP−14

DT SUFFIX

CASE 948G

or V ) ≤ V

out

Unused inputs must always be tied to an appropriate logic voltage

level (e.g., either V or V ). Unused outputs must be left open.

MARKING DIAGRAMS

Features

• Increased Hysteresis Voltage Over the MC14584B

• Supply Voltage Range = 3.0 Vdc to 18 Vdc

14106BG

AWLYWW

• Capable of Driving Two Low−power TTL Loads or One

Low−power Schottky TTL Load Over the Rated Temperature

Range

SOIC−14 NB

• Pin−for−Pin Replacement for CD40106B and MM74C14

• Can Be Used to Replace the MC14584B or MC14069UB

106B

ALYWG

• NLV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

TSSOP−14

MAXIMUM RATINGS (Voltages Referenced to V

)

= Assembly Location

WL, L = Wafer Lot

YY, Y = Year

Symbol

Parameter

Value

Unit

DC Supply Voltage Range

−0.5 to +18.0

WW, W = Work Week

V , V

Input or Output Voltage Range

(DC or Transient)

−0.5 to V + 0.5

G or G = Pb−Free Package

(Note: Microdot may be in either location)

in out

I , I

in out

Input or Output Current

(DC or Transient) per Pin

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Power Dissipation, per Package

(Note 1)

500

Ambient Temperature Range

Storage Temperature Range

−55 to +125

−65 to +150

260

°C

stg

Lead Temperature

(8−Second Soldering)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Temperature Derating: “D/DW” Packages: –7.0 mW/°C From 65°C To 125°C

Publication Order Number:

August, 2014 − Rev. 10

MC14106B/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NLV14106BDG相关器件

型号	品牌	获取价格	描述	数据表
NLV14106BDR2G	ONSEMI	获取价格	Hex Schmitt Trigger
NLV14106BDTR2G	ONSEMI	获取价格	Hex Schmitt Trigger
NLV14174BDR2G	ONSEMI	获取价格	六路 D 类触发器
NLV14175BDR2G	ONSEMI	获取价格	四路 D 型触发器
NLV14490DWG	ONSEMI	获取价格	Hex Contact Bounce Eliminator
NLV14490DWR2G	ONSEMI	获取价格	Hex Contact Bounce Eliminator
NLV14490PG	ONSEMI	获取价格	Hex Contact Bounce Eliminator
NLV14503BDR2G	ONSEMI	获取价格	六路非反相缓冲器，3 态
NLV14504BDG	ONSEMI	获取价格	Hex Level Shifter for TTL to CMOS
NLV14504BDR2G	ONSEMI	获取价格	Hex Level Shifter for TTL to CMOS

与NLV14106BDG相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

NLV14106BDG

NLV14106BDG 数据手册

与NLV14106BDG相关器件

与NLV14106BDG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NLV14106BDG

NLV14106BDG 数据手册

与NLV14106BDG相关器件

与NLV14106BDG相关文章

您还可以找

您在本页遇到什么问题？