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NLV14106BDG PDF预览

NLV14106BDG

更新时间: 2024-11-10 01:10:59
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安森美 - ONSEMI /
页数 文件大小 规格书
8页 126K
描述
Hex Schmitt Trigger

NLV14106BDG 数据手册

 浏览型号NLV14106BDG的Datasheet PDF文件第2页浏览型号NLV14106BDG的Datasheet PDF文件第3页浏览型号NLV14106BDG的Datasheet PDF文件第4页浏览型号NLV14106BDG的Datasheet PDF文件第5页浏览型号NLV14106BDG的Datasheet PDF文件第6页浏览型号NLV14106BDG的Datasheet PDF文件第7页 
MC14106B  
Hex Schmitt Trigger  
The MC14106B hex Schmitt Trigger is constructed with MOS  
P−channel and N−channel enhancement mode devices in a single  
monolithic structure. These devices find primary use where low power  
dissipation and/or high noise immunity is desired. The MC14106B  
may be used in place of the MC14069UB hex inverter for enhanced  
noise immunity or to “square up” slowly changing waveforms.  
This device contains protection circuitry to guard against damage  
due to high static voltages or electric fields. However, precautions  
must be taken to avoid applications of any voltage higher than  
maximum rated voltages to this high−impedance circuit. For proper  
operation, V and V should be constrained to the range V (V  
http://onsemi.com  
in  
out  
SS  
in  
SOIC−14 NB  
D SUFFIX  
CASE 751A  
TSSOP−14  
DT SUFFIX  
CASE 948G  
or V ) V  
.
out  
DD  
Unused inputs must always be tied to an appropriate logic voltage  
level (e.g., either V or V ). Unused outputs must be left open.  
SS  
DD  
MARKING DIAGRAMS  
Features  
14  
Increased Hysteresis Voltage Over the MC14584B  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
14106BG  
AWLYWW  
Capable of Driving Two Low−power TTL Loads or One  
Low−power Schottky TTL Load Over the Rated Temperature  
Range  
1
SOIC−14 NB  
Pin−for−Pin Replacement for CD40106B and MM74C14  
Can Be Used to Replace the MC14584B or MC14069UB  
14  
14  
106B  
ALYWG  
G
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
These Devices are Pb−Free and are RoHS Compliant  
1
TSSOP−14  
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
A
= Assembly Location  
WL, L = Wafer Lot  
YY, Y = Year  
Symbol  
Parameter  
Value  
Unit  
V
V
DD  
DC Supply Voltage Range  
0.5 to +18.0  
WW, W = Work Week  
V , V  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V + 0.5  
V
G or G = Pb−Free Package  
(Note: Microdot may be in either location)  
in out  
DD  
I , I  
in out  
Input or Output Current  
(DC or Transient) per Pin  
10  
mA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
P
D
Power Dissipation, per Package  
(Note 1)  
500  
mW  
T
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
A
T
stg  
T
Lead Temperature  
L
(8−Second Soldering)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Temperature Derating: “D/DW” Packages: –7.0 mW/°C From 65°C To 125°C  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
August, 2014 − Rev. 10  
MC14106B/D  
 

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