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NLV14512BDR2G PDF预览

NLV14512BDR2G

更新时间: 2024-11-24 01:16:51
品牌 Logo 应用领域
安森美 - ONSEMI 逻辑集成电路
页数 文件大小 规格书
6页 110K
描述
8-Channel Data Selector

NLV14512BDR2G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SOP, SOP16,.25针数:16
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:8 weeks风险等级:5.65
系列:4000/14000/40000JESD-30 代码:R-XDSO-G16
JESD-609代码:e3长度:9.9 mm
负载电容(CL):50 pF逻辑集成电路类型:MULTIPLEXER
湿度敏感等级:1功能数量:1
输入次数:8输出次数:1
端子数量:16最高工作温度:125 °C
最低工作温度:-55 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:UNSPECIFIED
封装代码:SOP封装等效代码:SOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TAPE AND REEL电源:5/15 V
Prop。Delay @ Nom-Sup:650 ns传播延迟(tpd):650 ns
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.75 mm子类别:Multiplexer/Demultiplexers
最大供电电压 (Vsup):18 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

NLV14512BDR2G 数据手册

 浏览型号NLV14512BDR2G的Datasheet PDF文件第2页浏览型号NLV14512BDR2G的Datasheet PDF文件第3页浏览型号NLV14512BDR2G的Datasheet PDF文件第4页浏览型号NLV14512BDR2G的Datasheet PDF文件第5页浏览型号NLV14512BDR2G的Datasheet PDF文件第6页 
MC14512B  
8-Channel Data Selector  
The MC14512B is an 8−channel data selector constructed with  
MOS P−channel and N−channel enhancement mode devices in  
a single monolithic structure. This data selector finds primary  
application in signal multiplexing functions. It may also be used for  
data routing, digital signal switching, signal gating, and number  
sequence generation.  
http://onsemi.com  
Features  
Diode Protection on All Inputs  
1
Single Supply Operation  
SOIC−16  
D SUFFIX  
CASE 751B  
3−State Output (Logic “1”, Logic “0”, High Impedance)  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Capable of Driving Two Low−power TTL Loads or One Low−power  
Schottky TTL Load Over the Rated Temperature Range  
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
PIN ASSIGNMENT  
X0  
X1  
X2  
X3  
X4  
X5  
X6  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
V
DD  
DIS  
Z
This Device is Pb−Free and is RoHS Compliant  
C
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
B
Parameter  
Symbol  
Value  
Unit  
V
A
DC Supply Voltage Range  
V
DD  
0.5 to +18.0  
INH  
X7  
Input or Output Voltage Range  
(DC or Transient)  
V , V  
in out  
0.5 to V  
+ 0.5  
V
DD  
V
SS  
Input or Output Current  
(DC or Transient) per Pin  
I , I  
in out  
10  
mA  
MARKING DIAGRAM  
Power Dissipation, Per Package (Note 1)  
Ambient Temperature Range  
P
500  
mW  
°C  
D
T
A
55 to +125  
65 to +150  
260  
16  
14512BG  
AWLYWW  
Storage Temperature Range  
T
stg  
°C  
Lead Temperature (8−Second Soldering)  
T
°C  
L
1
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Pb−Free Package  
WL  
YY, Y  
WW  
G
1. Temperature Derating: “D/DW” Package: –7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
high−impedance circuit. For proper operation, V and V should be constrained  
in  
out  
ORDERING INFORMATION  
to the range V (V or V ) V .  
SS  
in  
out  
DD  
Unused inputs must always be tied to an appropriate logic voltage level  
(e.g., either V or V ). Unused outputs must be left open.  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
SS  
DD  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
July, 2014 − Rev. 10  
MC14512B/D  
 

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