Datasheet > NE5520379A-A

NE5520379A-A

更新时间： 2024-09-23 19:46:31

品牌	Logo	应用领域
日电电子 - NEC		放大器 ISM频段晶体管
页数	文件大小	规格书
11页	81K
描述
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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NE5520379A-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	MICROWAVE, R-XQMW-F4	针数：	4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.13
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	3.8 V	最大漏极电流 (ID)：	1.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	L BAND
JESD-30 代码：	R-XQMW-F4	JESD-609代码：	e6
元件数量：	1	端子数量：	4
工作模式：	ENHANCEMENT MODE	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	MICROWAVE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	FLAT
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

NE5520379A-A 数据手册

DATA SHEET

SILICON POWER MOS FET

NE5520379A

3.2 V OPERATION SILICON RF POWER LD-MOS FET

FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate lateral-

diffusion MOS FET) and housed in a surface mount package. This device can deliver 34.6 dBm output power with

68% power efficiency at 915 MHz under the 2.8 V supply voltage.

FEATURES

•

High output power

: P^out= 35.5 dBm TYP. (V^DS= 3.2 V, V^GS= 2.5 V, f = 915 MHz, Pⁱⁿ= 25 dBm)

: P^out= 33.0 dBm TYP. (V^DS= 3.2 V, V^GS= 2.5 V, f = 1 785 MHz, Pⁱⁿ= 25 dBm)

High power added efficiency : η^add= 65% TYP. (V^DS= 3.2 V, V^GS= 2.5 V, f = 915 MHz, Pⁱⁿ= 25 dBm)

: η^add= 35% TYP. (V^DS= 3.2 V, V^GS= 2.5 V, f = 1 785 MHz, Pⁱⁿ= 25 dBm)

High linear gain

: G^L= 16.0 dB TYP. (V^DS= 3.2 V, V^GS= 2.5 V, f = 915 MHz, Pⁱⁿ= 10 dBm)

: G^L= 8.5 dB TYP. (V^DS= 3.2 V, V^GS= 2.5 V, f = 1 785 MHz, Pⁱⁿ= 10 dBm)

: 5.7 × 5.7 × 1.1 mm MAX.

•

Surface mount package

Single supply

: V^DS= 2.8 to 3.8 V

APPLICATIONS

•

Digital cellular phones : 3.2 V GSM/DCS Dual-Band handsets

Others : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications

ORDERING INFORMATION

Part Number

Package

79A

Marking

Supplying Form

• 12 mm wide embossed taping

NE5520379A-T1

• Gate pin face the perforation side of the tape

• Qty 1 kpcs/reel

NE5520379A-T1A

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, consult your NEC sales representative.

Part number for sample order: NE5520379A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10122EJ02V0DS (2nd edition)

Date Published September 2002 CP(K)

Printed in Japan

The mark ! shows major revised points.

NEC Corporation 2000

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...11

中文翻译

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与NE5520379A-A相关器件

型号	品牌	获取价格	描述	数据表
NE5520379A-T1	CEL	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
NE5520379A-T1A	CEL	获取价格	暂无描述
NE5520379A-T1A-A	CEL	获取价格	NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
NE5521	NXP	获取价格	LVDT signal conditioner
NE55210K+/-.25%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 210000ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel,
NE55210K+/-.5%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 210000ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel,
NE55210R+/-.5%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 210ohm, 250V, 0.5% +/-Tol, -25,25ppm/Cel,
NE55215K+/-.1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 215000ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel,
NE55215K+/-1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 215000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel,
NE55215R+/-.1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 215ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel,

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