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NE34018-T1-64 PDF预览

NE34018-T1-64

更新时间： 2024-11-13 20:51:07
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
9页 81K
描述
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4

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NE34018-T1-64 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：PLASTIC, SUPERMINI-4Reach Compliance Code：compliant
风险等级：5.66外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：3 V
最大漏极电流 (ID)：0.03 AFET 技术：HETERO-JUNCTION
最高频带：S BANDJESD-30 代码：R-PDSO-G4
JESD-609代码：e0元件数量：1
端子数量：4工作模式：DEPLETION MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：14 dB
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

NE34018-T1-64 数据手册

 浏览型号NE34018-T1-64的Datasheet PDF文件第2页浏览型号NE34018-T1-64的Datasheet PDF文件第3页浏览型号NE34018-T1-64的Datasheet PDF文件第4页浏览型号NE34018-T1-64的Datasheet PDF文件第5页浏览型号NE34018-T1-64的Datasheet PDF文件第6页浏览型号NE34018-T1-64的Datasheet PDF文件第7页 
GaAs HJ-FET  
L TO S BAND LOW NOISE AMPLIFIER  
(New Plastic Package)  
NE34018  
NOISE FIGURE & ASSOCIATED  
FEATURES  
GAIN vs. FREQUENCY  
VDS = 3 V, IDS = 20 mA  
•
•
•
LOW COST MINIATURE PLASTIC PACKAGE  
(SOT-343)  
25  
20  
15  
10  
5
4
3
2
1
0
LOW NOISE FIGURE:  
0.6 dB typical at 2 GHz  
G
A
HIGH ASSOCIATED GAIN:  
16.0 dB typical at 2 GHz  
•
•
LG = 0.6 µm, WG = 400 µm  
TAPE & REEL PACKAGING  
0
DESCRIPTION  
NF  
The NE34018 is a low cost gallium arsenide Hetero-Junction  
FET housed in a miniature (SOT-343) plastic surface mount  
package. The device is fabricated using ion implantation for  
improved RF and DC performance, reliability, and uniformity.  
Its low noise figure, high gain, small size and weight make it  
anideallownoiseamplifiertransistorinthe1-3GHzfrequency  
range.TheNE34018issuitableforGPS,PCS,WLAN,MMDS,  
and other commercial applications.  
0.5  
1
2
3
4
5 6 7 8 910  
Frequency, f (GHz)  
NEC's stringent quality assurance and test procedures en-  
sure the highest reliability and performance.  
18 Package  
SOT-343 Style  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
NE34018  
PACKAGE OUTLINE  
18  
SYMBOL  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
NF  
GA  
Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz  
Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz  
dB  
dB  
0.6  
1.0  
14.0  
16.0  
P1dB  
Output Power at 1 dB Gain Compression Point, f = 2 GHz  
VDS = 2 V, IDS = 10 mA  
dBm  
dBm  
12  
16.5  
VDS = 3 V, IDS = 30 mA  
G1dB  
Gain at P1dB, f = 2 GHz  
VDS = 2 V, IDS = 10 mA  
VDS = 3 V, IDS = 30 mA  
dB  
dB  
17.0  
17.5  
O/P IP3  
Output IP3 at f = 2 GHz, ∆f = 1 MHz  
VDS = 2 V, IDS = 10 mA  
dBm  
dBm  
23  
32  
VDS = 2 V, IDS = 30 mA  
IDSS  
VP  
Saturated Drain Current at VDS = 2 V, VGS = 0 V  
Pinch Off Voltage at VDS = 2 V, ID = 100 µA  
Transconductance at VDS = 2 V, ID = 5 mA  
Gate to Source Leakage Current at VGS = -3 V  
Thermal Resistance (Channel to Ambient)  
mA  
V
30  
-2.0  
30  
80  
120  
-0.2  
-0.8  
gm  
mS  
µA  
IGSO  
0.5  
10  
RTH(CH-A)  
˚C/W  
833  
Note:  
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually  
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production  
line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.  
California Eastern Laboratories  
1234567...9

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