是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, SUPERMINI-4 | Reach Compliance Code: | compliant |
风险等级: | 5.66 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 3 V |
最大漏极电流 (ID): | 0.03 A | FET 技术: | HETERO-JUNCTION |
最高频带: | S BAND | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 14 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE34018-T2 | NEC |
获取价格 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
NE34018-T2-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, H | |
NE34018-TI-63-A | CEL |
获取价格 |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) | |
NE34018-TI-64 | CEL |
获取价格 |
RF Small Signal Field-Effect Transistor, PLASTIC, SOT-343, 4 PIN | |
NE34018-TI-64-A | CEL |
获取价格 |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) | |
NE345L-10B | CEL |
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RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se | |
NE350184C | CEL |
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HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
NE350184C-T1 | CEL |
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HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
NE350184C-T1A | CEL |
获取价格 |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
NE350184C-T1-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Junction F |