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NE334S01-T1B PDF预览

NE334S01-T1B

更新时间: 2024-09-24 22:13:27
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器小信号场效应晶体管射频小信号场效应晶体管
页数 文件大小 规格书
12页 74K
描述
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NE334S01-T1B 技术参数

生命周期:Obsolete包装说明:PLASTIC, S01, 4 PIN
Reach Compliance Code:unknown风险等级:5.82
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE最小漏源击穿电压:4 V
最大漏极电流 (ID):0.02 AFET 技术:HETERO-JUNCTION
最高频带:C BANDJESD-30 代码:X-PXMW-G4
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:UNSPECIFIED封装形式:MICROWAVE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):15 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:UNSPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

NE334S01-T1B 数据手册

 浏览型号NE334S01-T1B的Datasheet PDF文件第2页浏览型号NE334S01-T1B的Datasheet PDF文件第3页浏览型号NE334S01-T1B的Datasheet PDF文件第4页浏览型号NE334S01-T1B的Datasheet PDF文件第5页浏览型号NE334S01-T1B的Datasheet PDF文件第6页浏览型号NE334S01-T1B的Datasheet PDF文件第7页 
DATA SHEET  
HETERO JUNCTION FIELD EFFECT TRANSISTOR  
NE334S01  
C BAND SUPER LOW NOISE AMPLIFIER  
N-CHANNEL HJ-FET  
DESCRIPTION  
PACKAGE DIMENSIONS  
The NE334S01 is a Herero Junction FET that utilizes the  
hetero junction to create high mobility electrons. Its excellent  
low noise and high associated gain make it suitable for TVRO  
and another commercial systems.  
(Unit: mm)  
2.0 ± 0.2  
1
FEATURES  
Super Low Noise Figure & High Associated Gain  
NF = 0.25 dB TYP., Ga = 16.0 dB TYP. at f = 4 GHz  
Gate Width: Wg = 280 m  
2
ORDERING INFORMATION  
C
4
PART NUMBER  
NE334S01-T1  
NE334S01-T1B  
SUPPLYING FORM  
MARKING  
C
1. Source  
Tape & reel 1000 pcs./reel  
Tape & reel 4000 pcs./reel  
2. Drain  
3. Source  
4. Gate  
3
0.65 TYP.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
1.9 ± 0.2  
1.6  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
VDS  
VGS  
ID  
4.0  
–3.0  
V
V
IDSS  
mA  
mW  
C
0.125 ± 0.05  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
Tch  
Tstg  
300  
0.4 MAX.  
4.0 ± 0.2  
125  
–65 to +125  
C
RECOMMENDED OPERATING CONDITION (TA = 25 C)  
CHARACTERISTIC  
Drain to Source Voltage  
Drain Current  
SYMBOL  
MIN.  
TYP.  
2
MAX.  
Unit  
V
VDS  
ID  
2.5  
20  
0
15  
mA  
dBm  
Input Power  
Pin  
Document No. P11139EJ3V0DS00 (3rd edition)  
Date Published October 1996 P  
Printed in Japan  
©
1996  

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