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NE34018

更新时间: 2024-11-12 22:30:15
品牌 Logo 应用领域
日电电子 - NEC 放大器
页数 文件大小 规格书
16页 115K
描述
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NE34018 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.16外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:3 V
最大漏极电流 (ID):0.03 AFET 技术:HETERO-JUNCTION
最高频带:S BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):14 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NE34018 数据手册

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DATA SHEET  
HJ-FET  
NE34018  
L to S BAND LOW NOISE AMPLIFIER  
N-CHANNEL HJ-FET  
DESCRIPTION  
NE34018 is a n-channel HJ-FET housed in MOLD package.  
PACKAGE DIMENSIONS  
in millimeters  
FEATURES  
2.1 ±0.2  
x
Low noise figure  
1.25 ±0.1  
NF = 0.6 dB TYP. at f = 2 GHz  
x
High associated gain  
Ga = 16 dB TYP. at f = 2 GHz  
x
Gate width: Wg = 400 Pm  
x
4 pins super mini mold  
x
Tape & reel packaging only available  
ORDERING INFORMATION  
QUANTITY  
PACKING STYLE  
PART NUMBER  
NE34018-T1  
3 Kpcs/Reel.  
Embossed tape 8 mm wide. Pin 3  
(Source), Pin 4 (Drain) face to  
perforation side of the tape.  
PIN CONNECTIONS  
1. Source  
2. Gate  
3. Source  
4. Drain  
NE34018-T2  
3 Kpcs/Reel.  
Embossed tape 8 mm wide. Pin 1  
(Source), Pin 2 (Gate) face to  
perforation side of the tape.  
*
Please contact with responsible NEC person, if you require evaluation  
sample. Unit sample quantity shall be 50 pcs. (Part number for sample  
order: NE34018)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)  
Drain to Source Voltage  
Gate to Source Voltage  
Gate Current  
VDS  
VGS  
ID  
4.0  
V
V
ð3.0  
IDSS  
mA  
mW  
qC  
qC  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
Tch  
Tstg  
150  
125  
ð65 to +125  
Document No. P11618EJ3V0DS00 (3rd edition)  
Date Published September 1997 N  
Printed in Japan  
©
1996  

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