生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.16 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 3 V |
最大漏极电流 (ID): | 0.03 A | FET 技术: | HETERO-JUNCTION |
最高频带: | S BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 14 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE34018-A | CEL |
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GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) | |
NE34018-T1 | NEC |
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L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
NE34018-T1-63 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun | |
NE34018-T1-64 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-jun | |
NE34018-T2 | NEC |
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L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
NE34018-T2-A | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, H | |
NE34018-TI-63-A | CEL |
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GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) | |
NE34018-TI-64 | CEL |
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RF Small Signal Field-Effect Transistor, PLASTIC, SOT-343, 4 PIN | |
NE34018-TI-64-A | CEL |
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GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) | |
NE345L-10B | CEL |
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RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se |