生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.6 | Is Samacsys: | N |
配置: | SINGLE | FET 技术: | HIGH ELECTRON MOBILITY |
最大反馈电容 (Crss): | 0.04 pF | 最高频带: | KA BAND |
元件数量: | 1 | 工作模式: | DEPLETION MODE |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 11 dB |
认证状态: | Not Qualified | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MWT-H773-18 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-2 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-3 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-4 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-5 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-6 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-7 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-8 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H7-9 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H9 | IXYS |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobil |