MSC80186

更新时间： 2024-11-13 22:45:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体射频和微波晶体管
页数	文件大小	规格书
6页	112K
描述
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS

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MSC80186 数据手册

MSC80186

RF & MICROWAVE TRANSISTORS

GENERAL PURPOSE LINEAR APPLICATIONS

EMITTER BALLASTED

CLASS A LINEAR OPERATION

COMMON EMITTER

VSWR CAPABILITY 15:1 @ RATED

CONDITIONS

ft 3.2 GHz TYPICAL

NOISE FIGURE 12.5 dB @ 2 GHz

.230 4L STUD (S027)

P_OUT

30.0 dBm MIN.

hermetically sealed

ORDER CODE

BRANDING

80186

MSC80186

PIN CONNECTION

DESCRIPTION

The MSC80185 is a hermetically sealed NPN

power transistor featuring a unique matrixstructure.

This device is specifically designed for Class A

linear applications to provide high gain and high

output power at the 1.0 dB compression point.

1. Collector

2. Emitter

3. Base

4. Emitter

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

P_DISS

I_C

Parameter

Value

—

Unit

Power Dissipation

(see Safe Area)

Device Bias Current

500

V_CE

Collector-Emitter Bias Voltage*

Junction Temperature

T_J

200

T_STG

Storage Temperature

65 to +200

−

THERMAL DATA

C/W

R_TH(j-c)

Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

1/6

October 1992

12 3 4 5 6

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