MSC81005

更新时间： 2024-09-14 22:51:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体放大器晶体管射频微波
页数	文件大小	规格书
5页	102K
描述
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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MSC81005 数据手册

MSC81005

RF & MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

EMITTER BALLASTED

REFRACTORY/GOLD METALLIZATION

VSWR CAPABILITY :1 @ RATED

∞

CONDITIONS

HERMETIC STRIPAC PACKAGE

P_OUT

@ 1 GHz

5.0 W MIN. WITH 10 dB GAIN

.230 2L STUD (S016)

hermetically sealed

ORDER CODE

BRANDING

81005

MSC81005

PIN CONNECTION

DESCRIPTION

The MSC81005 is a common base hermetically

sealed silicon NPN microwave transistor utilizing

a fishbone emitter ballasted geometry with a re-

fractory/gold metallization system. This device is

capable of withstanding an infinite load VSWR at

any phase angle under rated rated conditions. The

MSC81005 is designed for Class C amplifier ap-

plications in the 0.4 - 1.2 GHz frequency range.

1. Collector

2. Base

3. Emitter

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

P_DISS

I_C

Parameter

Value

18.75

600

Unit

Power Dissipation*

Device Current*

(T_C≤ 50°C)

V_CC

T_J

Collector-Supply Voltage*

Junction Temperature

Storage Temperature

200

T_STG

− 65 to +200

THERMAL DATA

C/W

R_TH(j-c)

Junction-Case Thermal Resistance*

8.0

*Applies only to rated RF amplifier operation

1/5

October 1992

12 3 4 5

中文翻译

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