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MSC80213 PDF预览

MSC80213

更新时间: 2024-09-15 04:10:55
品牌 Logo 应用领域
ASI 晶体晶体管
页数 文件大小 规格书
2页 25K
描述
NPN RF TRANSISTOR

MSC80213 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CXFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.65外壳连接:BASE
最大集电极电流 (IC):0.6 A基于收集器的最大容量:5 pF
配置:SINGLE最小直流电流增益 (hFE):30
最高频带:S BANDJESD-30 代码:O-CXFM-F2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):11.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

MSC80213 数据手册

 浏览型号MSC80213的Datasheet PDF文件第2页 
MSC80213  
NPN RF TRANSISTOR  
DESCRIPTION:  
The ASI MSC80213 is a Silicon NPN  
Microwave Transistor Supplied in a  
Common Base Package, Designed for  
general purpose Applications up to 2.3  
GHz.  
PACKAGE 230 2L FLG  
FEATURES:  
Hermetically Sealed Package  
Gold Metallization  
MAXIMUM RATINGS  
600 mA  
IC  
VCC  
VEB  
PDISS  
TJ  
26 V  
3.5 V  
11.5 W @ TC = 50 OC  
-65 OC to +200 OC  
-65 OC to +200 OC  
13 OC/W  
1 = Collector  
2 = Emitter  
3 = Base  
TSTG  
θJC  
TRANS1.SYM  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
BVCER  
TEST CONDITIONS  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
V
44  
IC = 5.0 mA  
IC = 1.0 mA  
IE = 1.0 mA  
VCB = 22 V  
VCE = 5.0 V  
RBE = 10Ω  
44  
BVCBO  
BVEBO  
ICBO  
V
V
3.5  
0.5  
mA  
IC = 250 mA  
30  
300  
hFE  
VCB = 22 V  
f = 1.0 MHz  
5.0  
COB  
pF  
3.8  
10  
40  
Pout  
PG  
W
Db  
%
VCC = 22 V  
PIN = 0.38 W  
f = 2.3 GHz  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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