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MSC80195 PDF预览

MSC80195

更新时间: 2024-11-13 22:45:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频微波
页数 文件大小 规格书
6页 110K
描述
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

MSC80195 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-CRFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.47
外壳连接:EMITTER最大集电极电流 (IC):0.3 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):15
最高频带:L BANDJESD-30 代码:O-CRFM-F2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):4.9 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):3200 MHz

MSC80195 数据手册

 浏览型号MSC80195的Datasheet PDF文件第2页浏览型号MSC80195的Datasheet PDF文件第3页浏览型号MSC80195的Datasheet PDF文件第4页浏览型号MSC80195的Datasheet PDF文件第5页浏览型号MSC80195的Datasheet PDF文件第6页 
MSC80195  
RF & MICROWAVE TRANSISTORS  
GENERAL PURPOSE LINEAR APPLICATIONS  
.
.
.
.
EMITTER BALLASTED  
CLASS A LINEAR OPERATION  
COMMON EMITTER  
VSWR CAPABILITY 20:1 @ RATED  
CONDITIONS  
ft 3.2 GHz TYPICAL  
.
.
.
NOISE FIGURE 12.0 dB @ 2 GHz  
.250 2LFL (S011)  
POUT  
28 dBm MIN. @ 2.0 GHz  
=
hermetically sealed  
ORDER CODE  
MSC80195  
BRANDING  
80195  
PIN CONNECTION  
DESCRIPTION  
The MSC80195 is a hermetically sealed NPN  
power transistor featuring a unique matrixstructure.  
This device is specifically designed for Class A  
linear applications to provide high gain and high  
output power at the 1.0 dB compression point.  
1. Collector  
2. Emitter  
3. Baser  
4. Emitter  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
Unit  
W
Power Dissipation  
(see Safe Area)  
Device Bias Current  
300  
20  
mA  
V
VCE  
Collector-Emitter Bias Voltage*  
Junction Temperature  
°
°
TJ  
200  
C
C
TSTG  
Storage Temperature  
65 to +200  
THERMAL DATA  
°
C/W  
RTH(j-c)  
Junction-Case Thermal Resistance*  
35  
*Applies only to rated RF amplifier operation  
1/6  
October 1992  

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