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MRF9085LSR3 PDF预览

MRF9085LSR3

更新时间： 2024-11-13 22:51:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
8页 492K
描述
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

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MRF9085LSR3 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：NI-780S, CASE 465A-06, 2 PINReach Compliance Code：unknown
风险等级：5.72外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-CDFP-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLATPACK
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：250 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

MRF9085LSR3 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF9085/D  
The RF Sub-Micron MOSFET Line  
RF Power Field Effect Transistors  
MRF9085LR3  
N-Channel Enhancement-Mode Lateral MOSFETs MRF9085LSR3  
Designed for broadband commercial and industrial applications with  
frequencies from 865 to 895 MHz. The high gain and broadband performance  
of these devices make them ideal for large-signal, common-source amplifier  
applications in 26 volt base station equipment.  
880 MHz, 90 W, 26 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA  
IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13  
Output Power — 20 Watts  
Power Gain — 17.9 dB  
Efficiency — 28%  
Adjacent Channel Power —  
750 kHz: -45.0 dBc @ 30 kHz BW  
1.98 MHz: -60.0 dBc @ 30 kHz BW  
• Internally Matched, Controlled Q, for Ease of Use  
• High Gain, High Efficiency and High Linearity  
• Integrated ESD Protection  
CASE 465-06, STYLE 1  
NI-780  
• Designed for Maximum Gain and Insertion Phase Flatness  
MRF9085LR3  
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW  
Output Power  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465A-06, STYLE 1  
NI-780S  
MRF9085LSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
- 0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
250  
1.43  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value (1)  
Unit  
R
θ
JC  
0.7  
°C/W  
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to  
access the MTTF calculators by product.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 9  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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