MRF9060SR1

更新时间： 2024-11-13 22:08:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		射频
页数	文件大小	规格书
12页	392K
描述
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF9060SR1 数据手册

ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF9060/D

The RF Sub–Micron MOSFET Line

ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ

ꢒꢀ ꢁ ꢖꢗꢘ ꢗꢀꢙ

N–Channel Enhancement–Mode Lateral MOSFETs

ꢒ

ꢀ

ꢁ

ꢖ

ꢗ

ꢘ

ꢗ

ꢚ

ꢀ

ꢙ

Designed for broadband commercial and industrial applications with frequen-

cies up to 1.0 GHz. The high gain and broadband performance of these devices

make them ideal for large–signal, common–source amplifier applications in 26

volt base station equipment.

• Typical Two–Tone Performance at 945 MHz, 26 Volts

Output Power — 60 Watts PEP

Power Gain — 17 dB

945 MHz, 60 W, 26 V

LATERAL N–CHANNEL

BROADBAND

Efficiency — 40%

IMD — –31 dBc

RF POWER MOSFETs

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

CASE 360B–05, STYLE 1

NI–360

MRF9060R1

CASE 360C–05, STYLE 1

NI–360S

MRF9060SR1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

MRF9060R1

159

0.91

219

Watts

W/°C

Watts

W/°C

MRF9060SR1

1.25

Storage Temperature Range

–65 to +200

200

°C

stg

Operating Junction Temperature

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

M1 (Minimum)

Machine Model

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

MRF9060R1

MRF9060SR1

1.1

0.8

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 4

MOTOROLA RF DEVICE DATA

MRF9060R1 MRF9060SR1

 Motorola, Inc. 2002

12 3 4 5 6 7...12

中文翻译

下载PDF

与MRF9060SR1相关器件

型号	品牌	获取价格	描述	数据表
MRF9080	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080LR3	FREESCALE	获取价格	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
MRF9080LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9080LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
MRF9080LSR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080S	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF9080SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9085	MOTOROLA	获取价格	880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9085LR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

与MRF9060SR1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

6
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

3
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF9060SR1

MRF9060SR1 数据手册

与MRF9060SR1相关器件

与MRF9060SR1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF9060SR1

MRF9060SR1 数据手册

与MRF9060SR1相关器件

与MRF9060SR1相关文章

您还可以找

您在本页遇到什么问题？