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MRF9080S

更新时间： 2024-10-01 13:11:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
12页 437K
描述
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN

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MRF9080S 技术参数

生命周期：Obsolete包装说明：FLATPACK, R-CDFP-F2
针数：3Reach Compliance Code：unknown
风险等级：5.69外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-CDFP-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLATPACK
极性/信道类型：N-CHANNEL认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

MRF9080S 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MRF9080/D  
The RF Sub–Micron MOSFET Line  
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N–Channel Enhancement–Mode Lateral MOSFETs  
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Designed for GSM 900 MHz frequency band, the high gain and broadband  
performance of these devices make them ideal for large–signal, common–  
source amplifier applications in 26 volt base station equipment.  
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• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts  
Output Power @ P1db: 75 Watts  
Power Gain @ P1db: 18.5 dB  
Efficiency @ P1db: 55%  
GSM 900 MHz FREQUENCY BAND,  
75 W, 26 V  
LATERAL N–CHANNEL  
BROADBAND RF POWER MOSFETs  
• Internally Matched, Controlled Q, for Ease of Use  
• High Gain, High Efficiency and High Linearity  
• Integrated ESD Protection  
• Designed for Maximum Gain and Insertion Phase Flatness  
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW  
Output Power  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large–Signal Impedance Parameters  
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
CASE 465–06, STYLE 1  
NI–780  
MRF9080  
CASE 465A–06, STYLE 1  
NI–780S  
MRF9080SR3, MRF9080LSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
V
GS  
–0.5, +15  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
1.43  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +200  
200  
°C  
°C  
stg  
T
J
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Minimum)  
M1 (Minimum)  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.7  
°C/W  
θ
JC  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 2  
Motorola, Inc. 2002  
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