MRF9080S

更新时间： 2024-11-14 13:11:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	437K
描述
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN

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技术参数
数据手册

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MRF9080S 技术参数

生命周期：	Obsolete	包装说明：	FLATPACK, R-CDFP-F2
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.69	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	65 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-CDFP-F2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLATPACK
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MRF9080S 数据手册

ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF9080/D

The RF Sub–Micron MOSFET Line

ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ

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N–Channel Enhancement–Mode Lateral MOSFETs

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Designed for GSM 900 MHz frequency band, the high gain and broadband

performance of these devices make them ideal for large–signal, common–

source amplifier applications in 26 volt base station equipment.

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• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts

Output Power @ P1db: 75 Watts

Power Gain @ P1db: 18.5 dB

Efficiency @ P1db: 55%

GSM 900 MHz FREQUENCY BAND,

75 W, 26 V

LATERAL N–CHANNEL

BROADBAND RF POWER MOSFETs

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

CASE 465–06, STYLE 1

NI–780

MRF9080

CASE 465A–06, STYLE 1

NI–780S

MRF9080SR3, MRF9080LSR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

250

1.43

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +200

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M1 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

0.7

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 2

MOTOROLA RF DEVICE DATA

MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3

 Motorola, Inc. 2002

12 3 4 5 6 7...12

中文翻译

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与MRF9080S相关器件

型号	品牌	获取价格	描述	数据表
MRF9080SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9085	MOTOROLA	获取价格	880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9085LR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9085LR3	MOTOROLA	获取价格	880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9085LR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9085LS	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF9085LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9085LSR3	MOTOROLA	获取价格	880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9085R3	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780, CASE 465-06, 3 PIN
MRF9085S	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN

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