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MRF9085LS PDF预览

MRF9085LS

更新时间： 2024-10-01 21:11:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 放大器晶体管
页数 文件大小 规格书
6页 158K
描述
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 465A-06, 3 PIN

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中文翻译

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MRF9085LS 技术参数

生命周期：Obsolete包装说明：FLATPACK, R-CDFP-F2
Reach Compliance Code：unknown风险等级：5.72
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-CDFP-F2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLATPACK极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：250 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

MRF9085LS 数据手册

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M OT O RO LA  
SEMICONDUCTOR TECHNICAL DATA  
The RF Sub–Micron MOSFET Line  
MR F 908 5  
MR F 9085 R 3  
MR F 9085S  
MR F 9085 SR 3  
MR F9 085L S  
R
F
P
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w
e
r
F
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t
T
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N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for broadband commercial and industrial applications with  
frequencies from 865 to 895 MHz. The high gain and broadband performance  
of these devices make them ideal for large–signal, common–source amplifier  
applications in 26 volt base station equipment.  
•
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA  
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13  
Output Power — 20 Watts  
M
R
F
9
0
8
5
L
S
R 3  
Power Gain — 17.9 dB  
Efficiency — 28%  
Adjacent Channel Power —  
750 kHz: –45.0 dBc @ 30 kHz BW  
1.98 MHz: –60.0 dBc @ 30 kHz BW  
880 MHz, 90 W, 26 V  
LATERAL N–CHANNEL  
RF POWER MOSFETs  
•
•
•
•
•
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW  
Output Power  
•
•
•
•
Excellent Thermal Stability  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates  
40µ″ Nominal.  
CASE 465–06, STYLE 1  
(NI–780)  
(MRF9085)  
CASE 465A–06, STYLE 1  
(NI–780S)  
(MRF9085S, MRF9085LS)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
V
GS  
+15, –0.5  
Total Device Dissipation @ T = 25°C  
P
D
250  
Watts  
C
Derate above 25°C  
1.43  
W/°C  
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +200  
200  
°C  
°C  
stg  
T
J
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
1 (Minimum)  
MRF9085  
MRF9085S/MRF9085LSR3  
M2 (Minimum)  
M1 (Minimum)  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.7  
°C/W  
θ
JC  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 6  
MOTOROLA WIRELESS  
RF PRODUCT DEVICE DATA  
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3  
5.2–181  
123456

中文翻译

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