Datasheet > MRF9085LR3_06

MRF9085LR3_06

更新时间： 2024-11-14 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	331K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF9085LR3_06 数据手册

Document Number: MRF9085

Rev. 11, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF9085LR3

MRF9085LSR3

Designed for broadband commercial and industrial applications with

frequencies from 865 to 895 MHz. The high gain and broadband performance

of these devices make them ideal for large-signal, common-source amplifier

applications in 26 volt base station equipment.

• Typical CDMA Performance @ 880 MHz, 26 Volts, I_DQ= 700 mA

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 20 Watts

880 MHz, 90 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 17.9 dB

Efficiency — 28%

Adjacent Channel Power —

750 kHz: -45.0 dBc @ 30 kHz BW

1.98 MHz: -60.0 dBc @ 30 kHz BW

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

CASE 465-06, STYLE 1

NI-780

MRF9085LR3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

CASE 465A-06, STYLE 1

NI-780S

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF9085LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5, +65

- 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

250

1.43

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

MRF9085LR3 MRF9085LSR3

Freescale Semiconductor

RF Product Device Data

4-1

12 3 4 5 6 7...12

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与MRF9085LR3_06相关器件

型号	品牌	获取价格	描述	数据表
MRF9085LS	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF9085LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9085LSR3	MOTOROLA	获取价格	880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9085R3	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780, CASE 465-06, 3 PIN
MRF9085S	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF9085SR3	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF9100	MOTOROLA	获取价格	GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9100LR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9100LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9100R3	MOTOROLA	获取价格	GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

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