Datasheet > MRF9080LR3_08

MRF9080LR3_08

更新时间： 2024-10-01 10:47:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
11页	212K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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数据手册

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MRF9080LR3_08 数据手册

Document Number: MRF9080

Rev. 8, 10/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for GSM 900 MHz frequency band, the high gain and broadband

performance of this device make it ideal for large-signal, common-source

amplifier applications in 26 volt base station equipment.

MRF9080LR3

• Typical Performance for GSM Frequencies, 960 MHz, 26 Volts

Output Power @ P1db: 75 Watts

Power Gain @ P1db: 18.5 dB

920-960 MHz, 75 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFET

Efficiency @ P1db: 55%

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465-06, STYLE 1

NI-780

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +65

- 0.5, +15

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

250

1.43

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M1 (Minimum)

MRF9080LR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

中文翻译

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