Datasheet > MRF9080LR3

MRF9080LR3

更新时间： 2024-11-14 03:52:43

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RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

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MRF9080LR3 数据手册

MRF9080

Rev. 5, 12/2004

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

Designed for GSM 900 MHz frequency band, the high gain and broadband

performance of these devices make them ideal for large−signal, common−

source amplifier applications in 26 volt base station equipment.

MRF9080LR3

MRF9080LSR3

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts

Output Power @ P1db: 75 Watts

Power Gain @ P1db: 18.5 dB

GSM 900 MHz FREQUENCY BAND,

75 W, 26 V

Efficiency @ P1db: 55%

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

LATERAL N−CHANNEL

RF POWER MOSFETs

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465−06, STYLE 1

NI−780

MRF9080LR3

CASE 465A−06, STYLE 1

NI−780S

MRF9080LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain−Source Voltage

Gate−Source Voltage

DSS

−0.5, +65

−0.5, +15

Total Device Dissipation @ T = 25°C

250

Derate above 25°C

1.43

W/°C

Storage Temperature Range

Operating Junction Temperature

−65 to +150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M1 (Minimum)

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9080LR3 MRF9080LSR3

Freescale Semiconductor

Wireless RF Product Device Data

5−1

12 3 4 5 6 7...12

中文翻译

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与MRF9080LR3相关器件

型号	品牌	获取价格	描述	数据表
MRF9080LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9080LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)
MRF9080LSR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9080S	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN
MRF9080SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9085	MOTOROLA	获取价格	880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9085LR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9085LR3	MOTOROLA	获取价格	880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9085LR3_06	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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