Datasheet > MRF21010

MRF21010

更新时间： 2024-09-13 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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描述
RF Power Field Effect Transistors

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数据手册

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MRF21010 数据手册

Document Number: MRF21010

Rev. 9, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF21010LR1

MRF21010LSR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN-PCS/cellular radio and WLL

applications.

2110-2170 MHz, 10 W, 28 V

LATERAL N-CHANNEL

BROADBAND

• Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,

5 MHz Offset/4.096 MHz BW, 15 DTCH

Output Power — 2.1 Watts

RF POWER MOSFETs

Power Gain — 13.5 dB

Efficiency — 21%

• Capable of Handling 10:1 VSWR @ 28 Vdc, 2140 MHz,

10 Watts CW Output Power

Features

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant.

CASE 360B-05, STYLE 1

NI-360

MRF21010LR1

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.

CASE 360C-05, STYLE 1

NI-360S

MRF21010LSR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

- 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

43.75

0.25

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Table 3. ESD Protection Characteristics

Test Conditions

5.5

°C/W

Class

Human Body Model

1 (Minimum)

M1 (Minimum)

Machine Model

MRF21010LR1 MRF21010LSR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7 8

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与MRF21010相关器件

型号	品牌	获取价格	描述	数据表
MRF21010LR1	MOTOROLA	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21010LR1	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
MRF21010LR1_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21010LSR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF21010LSR1	MOTOROLA	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LSR1	NXP	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360S, CASE 360C-05, 2 PIN
MRF21010R1	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 3 PIN
MRF21010S	MOTOROLA	获取价格	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN
MRF21010S	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B