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MRF160 PDF预览

MRF160

更新时间: 2024-02-22 23:13:04
品牌 Logo 应用领域
ASI 晶体射频场效应晶体管
页数 文件大小 规格书
1页 163K
描述
POWE FIELD EFFECT TRANSISTOR

MRF160 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.24熔断特性:FAST
主体高度:7.7 mm主体长度或直径:8.35 mm
电路保护类型:Electric Fuse保险丝尺寸:MICRO
JESD-609代码:e3最高工作温度:125 °C
最低工作温度:-55 °C物理尺寸:8.35mm x 7.7mm
额定分断能力:35 A额定电流:0.16 A
额定电压:250 V参考标准:CE, CSA, PSE, UL, VDE
端子面层:Matte Tin (Sn)Base Number Matches:1

MRF160 数据手册

  
MRF160  
POWE FIELD EFFECT TRANSISTOR  
PACKAGE STYLE .280 4L PILL  
DESCRIPTION:  
The MRF160 is an Enhancement-  
Mode N-Channel TMOS designed for  
wideband large-signal amplifier and  
oscillator applications to 500 MHz.  
MAXIMUM RATINGS  
0.5 mA  
65 V  
ID  
VDSS  
VGS  
PDISS  
TJ  
±40 V  
8.0 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
13.2 °C/W  
Style 3  
TSTG  
θJC  
NONE  
TYPICAL MAXIMUM  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
V(BR)DSS  
TEST CONDITIONS  
MINIMUM  
UNITS  
V
ID = 5.0 mA  
VGS = 0 V  
VGS = 0 V  
VDS = 0 V  
ID = 10 mA  
ID = 100 mA  
65  
VDSS = 28 V  
VGS = 40 V  
VDS = 10 V  
VDS = 10 V  
0.5  
1.0  
6.0  
IDSS  
IGSS  
VGS(th)  
gfs  
mA  
µA  
1.0  
50  
V
mmhos  
3.0  
Ciss  
V
DS = 28 V  
DS = 28 V  
VGS = 0 V  
f = 1.0 MHz  
f = 400 MHz  
pF  
dB  
4.2  
0.45  
Coss  
Crss  
V
ID = 100 mA  
3.0  
NF  
ZS = 67.7+j = 14.1  
ZL = 14.5+j = 25.7  
16  
45  
20  
55  
Gps  
dB  
%
VDD = 28 V  
Pout = 2.0 W  
IDQ = 100 mA f = 400 MHz  
η
VDD = 28 V  
IDQ = 100 mA  
Pout = 2.0 W  
ψ
NO DEGRADRADATION IN OUTPUT POWER  
VSWR = 30:1 at all phase angles f = 400 MHz  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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