Order this document
by MRF173/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement Mode MOSFETs
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
these devices make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFETs
•
Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
•
•
•
•
•
Low Thermal Resistance
D
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
Excellent Thermal Stability; Suited for Class A Operation
G
S
CASE 211–11, STYLE 2
(MRF173)
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Vdc
Adc
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
V
DSS
V
DGO
65
V
GS
±40
9.0
I
D
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
220
1.26
Watts
W/°C
C
CASE 316–01, STYLE 2
(MRF173CQ)
Storage Temperature Range
Operating Temperature Range
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.8
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (V
= 0 V, V
= 0 V)
= 0 V)
I
= 50 mA
V
(BR)DSS
65
—
—
—
—
—
—
V
DS
GS
D
Zero Gate Voltage Drain Current (V
= 28 V, V
I
2.0
1.0
mA
µA
DS
= 40 V, V
GS
DSS
Gate–Source Leakage Current (V
= 0 V)
DS
I
GS
GSS
ON CHARACTERISTICS
Gate Threshold Voltage (V
DS
= 10 V, I = 50 mA)
V
1.0
—
3.0
—
6.0
1.4
—
V
V
D
GS(th)
V
DS(on)
Drain–Source On–Voltage (V
, V
DS(on) GS
= 10 V, I = 3.0 A)
D
Forward Transconductance (V = 10 V, I = 2.0 A)
g
fs
1.8
2.2
mhos
DS
D
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF173 MRF173CQ
1