Datasheet > MRF16006

MRF16006

更新时间： 2024-11-04 22:45:59

品牌	Logo	应用领域
泰科 - TE		晶体晶体管放大器局域网
页数	文件大小	规格书
5页	143K
描述
RF POWER TRANSISTOR NPN SILICON

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中文翻译

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技术参数
数据手册

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MRF16006 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.06
Is Samacsys：	N	最大集电极电流 (IC)：	1 A
配置：	Single	最小直流电流增益 (hFE)：	20
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	26 W	子类别：	Other Transistors
Base Number Matches：	1

MRF16006 数据手册

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SEMICONDUCTOR TECHNICAL DATA

by MRF16006/D

The RF Line

NP N S ilic on

RF Power Transistor

Designed for 28 Volt microwave large–signal, common base, Class–C CW

amplifier applications in the range 1600 – 1640 MHz.

6.0 WATTS, 1.6 GHz

RF POWER TRANSISTOR

NPN SILICON

•

Specified 28 Volt, 1.6 GHz Class–C Characteristics

Output Power = 6 Watts

Minimum Gain = 7.4 dB, @ 6 Watts

Minimum Efficiency = 40% @ 6 Watts

•

Characterized with Series Equivalent Large–Signal Parameters from

1500 MHz to 1700 MHz

•

Silicon Nitride Passivated

Gold Metallized, Emitter Ballasted for Long Life and Resistance to

Metal Migration

CASE 395C–01, STYLE 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector–Emitter Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

Adc

CES

EBO

4.0

Collector–Current

1.0

Total Device Dissipation @ T = 25°C

Watts

Derate above 25°C

0.15

W/°C

Storage Temperature Range

–65 to +150

6.8

°C

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case (1) (2)

°C/W

(1) Thermal measurement performed using CW RF operating condition.

(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.

REV 2

MRF16006

12 3 4 5

中文翻译

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