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MRF166W PDF预览

MRF166W

更新时间: 2024-12-01 14:54:15
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
12页 1102K
描述
The RF MOSFET Line 40W, 500MHz, 28V

MRF166W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.46
Is Samacsys:N外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:65 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):175 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF166W 数据手册

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MRF166W  
The RF MOSFET Line  
40W, 500MHz, 28V  
Rev. V1  
Product Image  
Designed primarily for wideband largesignal output and driver stages to  
30 500 MHz.  
NChannel enhancement mode MOSFET  
Pushpull configuration reduces even numbered harmonics  
Guaranteed performance at 500 MHz, 28 Vdc  
Output power = 40 W  
Gain = 14 dB  
Efficiency = 50%  
Typical performance at 175 MHz, 28 Vdc  
Output power = 40 W  
Gain = 17 dB  
CASE 41201, Style 1  
Efficiency = 60%  
Excellent thermal stability, ideally suited for Class A operation  
Facilitates manual gain control, ALC and modulation techniques  
100% tested for load mismatch at all phase angles with 30:1 VSWR  
Low Crss 4.0 pF @ VDS = 28 V  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  

MRF166W 替代型号

型号 品牌 替代类型 描述 数据表
MRF166C MACOM

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