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MRF166C PDF预览

MRF166C

更新时间: 2024-11-04 22:45:59
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摩托罗拉 - MOTOROLA 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
6页 115K
描述
MOSFET BROADBAND RF POWER FETs

MRF166C 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F6
针数:6Reach Compliance Code:unknown
风险等级:5.15Is Samacsys:N
配置:SINGLE最小漏源击穿电压:65 V
最大漏极电流 (ID):4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:70 W最小功率增益 (Gp):14 dB
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF166C 数据手册

 浏览型号MRF166C的Datasheet PDF文件第2页浏览型号MRF166C的Datasheet PDF文件第3页浏览型号MRF166C的Datasheet PDF文件第4页浏览型号MRF166C的Datasheet PDF文件第5页浏览型号MRF166C的Datasheet PDF文件第6页 
Order this document  
by MRF166C/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF MOSFET Line  
N–Channel Enhancement Mode MOSFETs  
Designed primarily for wideband large–signal output and driver from 30500  
MHz.  
Low C  
— 4.5 pF @ V = 28 V  
DS  
rss  
20 W, 500 MHz  
MOSFET  
BROADBAND  
RF POWER FETs  
MRF166C — Typical Performance at 400 MHz, 28 Vdc  
Output Power = 20 W  
Gain = 17 dB  
Efficiency = 55%  
Replacement for Industry Standards such as MRF136, DV2820, BLF244,  
SD1902, and ST1001  
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR  
Facilitates Manual Gain Control, ALC and Modulation Techniques  
Excellent Thermal Stability, Ideally Suited for Class A Operation  
Circuit board photomaster available upon request by  
contacting RF Tactical Marketing in Phoenix, AZ.  
D
CASE 319–07, STYLE 3  
G
S
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Gate Voltage  
Drain–Gate Voltage  
V
DSS  
V
DGR  
65  
(R  
= 1.0 M)  
GS  
Gate–Source Voltage  
V
±40  
Adc  
Adc  
GS  
Drain Current — Continuous  
I
4.0  
D
Total Device Dissipation @ T = 25°C  
Derate Above 25°C  
P
D
70  
0.4  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
65 to 150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
2.5  
°C/W  
θJC  
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 7  
Motorola, Inc. 1995  

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