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MRF161 PDF预览

MRF161

更新时间: 2024-11-04 22:45:59
品牌 Logo 应用领域
ASI 晶体射频场效应晶体管
页数 文件大小 规格书
1页 19K
描述
SILICON N-CHANNEL RF POWER MOSFET

MRF161 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.27
Is Samacsys:N配置:Single
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):0.9 A
最大漏极电流 (ID):0.9 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):17.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF161 数据手册

  
MRF161  
SILICON N-CHANNEL RF POWER MOSFET  
PACKAGE STYLE .500 4L FLG  
DESCRIPTION:  
The MRF161 is an Enhancement-  
Mode N-Channel MOS Broadband RF  
Power Transistor for Wideband Large  
Signal Amplifier and Oscillator  
.112x45°  
L
A
S
D
Ø.125 NOM.  
FULL R  
C
B
E
Applications from 2.0 to 400 MHz.  
S
G
D
F
G
H
MAXIMUM RATINGS  
K
J
I
900 mA  
65 V  
ID  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
VDSS  
VGS  
PDISS  
TJ  
.220 / 5.59  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
.125 / 3.18  
.125 / 3.18  
.245 / 6.22  
.255 / 6.48  
±40 V  
.720 / 18.28  
.7.30 / 18.54  
17.5 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
10 OC/W  
.970 / 24.64  
.495 / 12.57  
.003 / 0.08  
.090 / 2.29  
.150 / 3.81  
.980 / 24.89  
.505 / 12.83  
.007 / 0.18  
.110 / 2.79  
.175 / 4.45  
.280 / 7.11  
1.050 / 26.67  
TSTG  
θJC  
J
K
L
.980 / 24.89  
CHARACTERISTICS TC = 25 O  
C
NONE  
SYMBOL  
V(BR)DSS  
TEST CONDITIONS  
VGS = 0 V  
MINIMUM  
TYPICAL MAXIMUM  
UNITS  
V
ID = 5.0 mA  
VDSS = 28 V  
VGS = 40 V  
VDS = 10 V  
VDS = 10 V  
65  
VGS = 0 V  
VDS = 0 V  
1.0  
1.0  
6.0  
IDSS  
IGSS  
VGS(th)  
gfs  
mA  
µA  
ID = 10 mA  
ID = 100 mA  
1.0  
80  
V
mmhos  
7.0  
Ciss  
VDS = 28 V  
VGS = 0 V  
f = 1.0 MHz  
f = 400 MHz  
9.7  
2.3  
pF  
dB  
Coss  
Crss  
VDS = 28 V  
ID = 100 mA  
3.0  
NF  
ZS = 67.7+j = 14.1  
ZL = 14.5+j = 25.7  
11.0  
45  
13.5  
50  
Gps  
dB  
%
VDD = 28 V  
IDQ = 50 mA  
Pout = 5.0 W  
Pout = 5.0 W  
η
VDD = 28 V  
VSWR = 30:1 AT ALL PHASE ANGLES  
IDQ = 50 mA  
ψ
NO DEGRADRADATION IN OUTPUT POWER  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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