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MRF172 PDF预览

MRF172

更新时间: 2024-11-17 22:45:59
品牌 Logo 应用领域
ASI 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
1页 18K
描述
VHF POWER MOSFET N-Channel Enhancement Mode

MRF172 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.27
Is Samacsys:N配置:Single
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):220 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF172 数据手册

  
MRF172  
VHF POWER MOSFET  
N-Channel Enhancement Mode  
DESCRIPTION:  
The ASI MRF172 is Designed for  
wideband large-signal output and  
driver stages in the 2.0-200 MHz  
frequency range.  
PACKAGE STYLE .380 4L FLG  
.112 x 45°  
B
A
Ø.125 NOM.  
FULL R  
FEATURES:  
S
D
S
J
PG = 10 dB Min. at 150 MHz  
30:1 Load VSWR Capability  
Omnigold™ Metalization System  
.125  
G
C
E
D
F
I
H
G
MAXIMUM RATINGS  
9.0 A  
65 V  
ID  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
VDSS  
VGS  
PDISS  
TJ  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
±40 V  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
220 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
0.8 °C/W  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
TSTG  
θJC  
.240 / 6.10  
J
ORDER CODE: ASI10830  
NONE  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
BVDSS  
IDS = 50 mA  
VDS = 28 V  
VDS = 0 V  
65  
V
mA  
µA  
IDSS  
IGSS  
VGS(th)  
gfs  
VGS = 0 V  
5.0  
1.0  
5.0  
VGS = 20 V  
VDS = 10 V  
VDS = 10 V  
ID = 50 mA  
ID = 2.5 A  
1.0  
1.5  
V
mho  
200  
110  
20  
Ciss  
Coss  
Crss  
VDS = 28 V  
VDD = 28 V  
VGS = 0 V  
f = 1.0 MHz  
pF  
PG  
ηD  
IDQ = 50 mA  
Pout = 80 W  
f = 150 MHz  
10  
50  
dB  
%
ψ
VSWR = 30:1 AT ALL PHASE ANGLES  
NO DEGRADATION IN OUTPUT POWER  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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