Document Number: MMG3009NT1
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3009NT1
The MMG3009NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general
small-signal RF.
0-6000 MHz, 15 dB
18 dBm
Features
InGaP HBT
• Frequency: 0 to 6000 MHz
• P1dB: 18 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 34 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
1
2
3
CASE 1514-01, STYLE 1
SOT-89
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
PLASTIC
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Symbol 900 2140 3500 Unit
Rating
Symbol
Value
Unit
V
MHz MHz
MHz
(2)
Supply Voltage
V
7
300
CC
CC
Small-Signal Gain
(S21)
G
15
-13
-17
18
14
-26
-15
18
12.5
dB
dB
dB
p
(2)
Supply Current
RF Input Power
I
mA
dBm
°C
P
10
in
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-22
-24
Storage Temperature Range
T
stg
-65 to +150
150
(3)
Output Return Loss
(S22)
Junction Temperature
T
°C
J
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
Power Output @1dB
Compression
17.5 dBm
31 dBm
exceed 150°C.
Third Order Output
Intercept Point
34
32
1. V = 5 Vdc, T = 25°C, 50 ohm system
CC
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 70 mA, T = 25°C)
CC
CC
C
(4)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
81
°C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MMG3009NT1
Freescale Semiconductor
RF Product Device Data
6-1