Datasheet > MMDT5551

MMDT5551

更新时间： 2024-11-16 17:01:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	379K
描述
150V,0.2A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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MMDT5551 数据手册

Dual NPN Silicon Epitaxial Planar Transistor

MMDT5551

Features



Epitaxial planar die construction

Complementary PNP type available(MMDT5401)

Mechanical Data



Case: SOT-363

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

SOT-363

Shipping Quantity

Marking Code

K4N

MMDT5551

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

180

160

Unit

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

0.6

I_CM

0.8

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

0.2

Unit

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Junction Temperature Range

R_θJA

R_θJC

R_θJL

T_J

625

°C /W

°C

324

196

214

-55 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

STM5021A: May 2023 [2.1]

www.gmesemi.com

12 3 4

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