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MMBTA92LT1 PDF预览

MMBTA92LT1

更新时间: 2024-02-22 15:53:17
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管光电二极管高压
页数 文件大小 规格书
6页 104K
描述
High Voltage Transistors(PNP Silicon)

MMBTA92LT1 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliant风险等级:5.8
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP参考标准:AEC-Q101
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MMBTA92LT1 数据手册

 浏览型号MMBTA92LT1的Datasheet PDF文件第2页浏览型号MMBTA92LT1的Datasheet PDF文件第3页浏览型号MMBTA92LT1的Datasheet PDF文件第4页浏览型号MMBTA92LT1的Datasheet PDF文件第5页浏览型号MMBTA92LT1的Datasheet PDF文件第6页 
Order this document  
by MMBTA92LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
COLLECTOR  
3
PNP Silicon  
*Motorola Preferred Device  
1
BASE  
2
EMITTER  
3
MAXIMUM RATINGS  
Rating  
Symbol  
MMBTA92  
–300  
MMBTA93  
–200  
Unit  
Vdc  
1
2
CollectorEmitter Voltage  
CollectorBase Voltage  
V
CEO  
V
CBO  
V
EBO  
–300  
–200  
Vdc  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
EmitterBase Voltage  
–5.0  
–5.0  
Vdc  
Collector Current — Continuous  
DEVICE MARKING  
I
C
–500  
mAdc  
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR–5 Board,  
= 25°C  
Derate above 25°C  
P
225  
mW  
D
T
A
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
Derate above 25°C  
T = 25°C  
A
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
JA  
T , T  
J
–55 to +150  
stg  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(3)  
CollectorEmitter Breakdown Voltage  
V
V
V
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = –1.0 mAdc, I = 0)  
MMBTA92  
MMBTA93  
–300  
–200  
C
B
CollectorBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
Vdc  
MMBTA92  
MMBTA93  
–300  
–200  
C
E
EmitterBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
–5.0  
Vdc  
E
C
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= –200 Vdc, I = 0)  
MMBTA92  
MMBTA93  
–0.25  
–0.25  
E
= –160 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = –3.0 Vdc, I = 0)  
I
–0.1  
µAdc  
EBO  
EB  
C
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1998  

MMBTA92LT1 替代型号

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KST92MTF ONSEMI

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